Vishay IRFU Type N-Channel MOSFET, 4.3 A, 100 V Enhancement, 3-Pin IPAK (TO-251)
- RS Stock No.:
- 708-4831
- Mfr. Part No.:
- IRFU110PBF
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
PHP312.46
(exc. VAT)
PHP349.96
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- 3,000 unit(s) shipping from November 13, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 10 | PHP31.246 | PHP312.46 |
| 20 - 40 | PHP30.309 | PHP303.09 |
| 50 - 90 | PHP29.398 | PHP293.98 |
| 100 - 190 | PHP28.515 | PHP285.15 |
| 200 + | PHP27.66 | PHP276.60 |
*price indicative
- RS Stock No.:
- 708-4831
- Mfr. Part No.:
- IRFU110PBF
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4.3A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | IPAK (TO-251) | |
| Series | IRFU | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.54Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 25W | |
| Typical Gate Charge Qg @ Vgs | 8.3nC | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 100V | |
| Maximum Operating Temperature | 150°C | |
| Width | 2.38 mm | |
| Standards/Approvals | RoHS 2002/95/EC | |
| Height | 6.22mm | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4.3A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type IPAK (TO-251) | ||
Series IRFU | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.54Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 25W | ||
Typical Gate Charge Qg @ Vgs 8.3nC | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 100V | ||
Maximum Operating Temperature 150°C | ||
Width 2.38 mm | ||
Standards/Approvals RoHS 2002/95/EC | ||
Height 6.22mm | ||
Length 6.73mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
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