Vishay IRFU1N60A Type N-Channel Power MOSFET, 1.4 A, 600 V Enhancement, 3-Pin IPAK IRFU1N60APBF

RS Stock No.:: 145-1664
Mfr. Part No.:: IRFU1N60APBF
Manufacturer:: Vishay

Vishay IRFU1N60A Type N-Channel Power MOSFET, 1.4 A, 600 V Enhancement, 3-Pin IPAK IRFU1N60APBF

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Subtotal (1 tube of 75 units)*

PHP4,551.75

(exc. VAT)

PHP5,097.75

(inc. VAT)

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In Stock

Plus 525 unit(s) shipping from August 10, 2026

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Units	Per Unit	Per Tube*
75 +	PHP60.69	PHP4,551.75

*price indicative

RS Stock No.:: 145-1664
Mfr. Part No.:: IRFU1N60APBF
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	1.4A
	Maximum Drain Source Voltage Vds	600V
	Package Type	IPAK
	Series	IRFU1N60A
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	7Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	14nC
	Maximum Power Dissipation Pd	36W
	Maximum Gate Source Voltage Vgs	30V
	Forward Voltage Vf	1.6V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Width	2.39mm
	Height	6.22mm
	Length	6.73mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 1.4A
	Maximum Drain Source Voltage Vds 600V
	Package Type IPAK
	Series IRFU1N60A
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 7Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 14nC
	Maximum Power Dissipation Pd 36W
	Maximum Gate Source Voltage Vgs 30V
	Forward Voltage Vf 1.6V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Width 2.39mm
	Height 6.22mm
	Length 6.73mm
	Automotive Standard No

COO (Country of Origin):: MY

Vishay IRFU1N60A Series Power MOSFET, 600V Drain Source Voltage, 1.4A Continuous Drain Current - IRFU1N60APBF

This power MOSFET is a high-voltage N-channel switching transistor designed for through-hole assembly in industrial electronics. It is intended for applications requiring high drain-source voltage handling and moderate continuous current, operating across a wide temperature range for demanding environments. The device complies with RoHS and is supplied in an IPak through-hole package.

Features and Benefits:

• 600V drain-source voltage for high-voltage switching capability
• 1.4A continuous drain current supporting moderate load currents
• 7Ω maximum Rds(on) reducing conduction losses at low currents
• 36W power dissipation allowing sustained thermal load handling
• 14nC typical gate charge enabling efficient gate-drive behaviour
• Gate-source withstand up to 30V for robust control-voltage margin

Applications

• Suitable for offline power supplies requiring high-voltage switches
• Used for lighting ballast and lamp control circuits
• Ideal for motor-drive gate stage in low-power systems
• Can be used for snubber or clamp-switch functions in converters
• Used with sensor and measurement front ends requiring high Vds

What thermal extremes can the device tolerate in operation?

It operates from -55°C up to 150°C, permitting use in industrial and elevated-temperature assemblies.

How is the transistor mounted on the board?

It is intended for through-hole mounting in an IPak package for secure mechanical retention.

What is the typical forward voltage in conduction scenarios?

The device exhibits a forward voltage of 1.6V under the specified test conditions for body-diode conduction.

Does the gate require special drive considerations due to charge?

With a typical gate charge of 14nC, gate drivers should be chosen to provide sufficient current for the intended switching speed without excessive drive losses.