Vishay Si2319CDS Type P-Channel MOSFET, 4.4 A, 40 V Enhancement, 3-Pin SOT-23
- RS Stock No.:
- 919-4208
- Mfr. Part No.:
- SI2319CDS-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 3000 units)*
PHP50,829.00
(exc. VAT)
PHP56,928.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 24,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | PHP16.943 | PHP50,829.00 |
| 6000 - 6000 | PHP16.787 | PHP50,361.00 |
| 9000 - 15000 | PHP16.568 | PHP49,704.00 |
| 18000 - 24000 | PHP16.355 | PHP49,065.00 |
| 27000 + | PHP16.147 | PHP48,441.00 |
*price indicative
- RS Stock No.:
- 919-4208
- Mfr. Part No.:
- SI2319CDS-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.4A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | Si2319CDS | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 108mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 13.6nC | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.02mm | |
| Standards/Approvals | No | |
| Length | 3.04mm | |
| Width | 1.4 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.4A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series Si2319CDS | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 108mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 13.6nC | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 1.02mm | ||
Standards/Approvals No | ||
Length 3.04mm | ||
Width 1.4 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch
• DC/DC Converter
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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