Vishay TrenchFET Type P-Channel MOSFET, 5 A, 30 V Enhancement, 3-Pin SOT-23 SI2347DS-T1-GE3

RS Stock No.:: 180-7778
Mfr. Part No.:: SI2347DS-T1-GE3
Manufacturer:: Vishay

Vishay TrenchFET Type P-Channel MOSFET, 5 A, 30 V Enhancement, 3-Pin SOT-23 SI2347DS-T1-GE3

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Subtotal (1 pack of 50 units)*

PHP585.55

(exc. VAT)

PHP655.80

(inc. VAT)

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In Stock

150 unit(s) ready to ship from another location
Plus 4,850 unit(s) shipping from January 01, 2026

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Units	Per Unit	Per Pack*
50 - 50	PHP11.711	PHP585.55
100 - 450	PHP10.54	PHP527.00
500 - 950	PHP9.486	PHP474.30
1000 +	PHP8.537	PHP426.85

*price indicative

RS Stock No.:: 180-7778
Mfr. Part No.:: SI2347DS-T1-GE3
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	5A
	Maximum Drain Source Voltage Vds	30V
	Series	TrenchFET
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	42mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	14.5nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	-1.2V
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	1.1W
	Maximum Operating Temperature	150°C
	Length	3.04mm
	Width	2.64 mm
	Height	1.12mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 5A
	Maximum Drain Source Voltage Vds 30V
	Series TrenchFET
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 42mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 14.5nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf -1.2V
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 1.1W
	Maximum Operating Temperature 150°C
	Length 3.04mm
	Width 2.64 mm
	Height 1.12mm
	Standards/Approvals No
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 30V and a maximum gate-source voltage of 20V. It has drain-source resistance of 42mohm at a gate-source voltage of 10V. It has a maximum power rating of 1.7W and continuous drain current of 5A. The minimum and a maximum driving voltage for this transistor are 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• DC/DC converter

• Load switch

• Notebook adaptor switch

• Power management

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested