Vishay TrenchFET Type P-Channel MOSFET, 2.7 A, 30 V Enhancement, 3-Pin SOT-23 SI2303CDS-T1-GE3

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Subtotal (1 pack of 20 units)*

PHP603.26

(exc. VAT)

PHP675.66

(inc. VAT)

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Units
Per Unit
Per Pack*
20 - 20PHP30.163PHP603.26
40 - 80PHP29.107PHP582.14
100 - 180PHP28.646PHP572.92
200 - 380PHP28.233PHP564.66
400 +PHP21.514PHP430.28

*price indicative

Packaging Options:
RS Stock No.:
710-3241
Mfr. Part No.:
SI2303CDS-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

2.7A

Maximum Drain Source Voltage Vds

30V

Package Type

SOT-23

Series

TrenchFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.33Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

2.3W

Forward Voltage Vf

-1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

4nC

Maximum Operating Temperature

150°C

Standards/Approvals

IEC 61249-2-21

Height

1.02mm

Length

3.04mm

Automotive Standard

No

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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