Vishay TrenchFET Type P-Channel MOSFET, 2.7 A, 30 V Enhancement, 3-Pin SOT-23 SI2303CDS-T1-GE3

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Subtotal (1 pack of 20 units)*

PHP573.88

(exc. VAT)

PHP642.74

(inc. VAT)

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Last RS stock
  • Plus 40 unit(s) shipping from January 12, 2026
  • Final 11,140 unit(s) shipping from January 19, 2026
Units
Per Unit
Per Pack*
20 - 20PHP28.694PHP573.88
40 - 80PHP27.689PHP553.78
100 - 180PHP27.251PHP545.02
200 - 380PHP26.858PHP537.16
400 +PHP20.466PHP409.32

*price indicative

Packaging Options:
RS Stock No.:
710-3241
Mfr. Part No.:
SI2303CDS-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

2.7A

Maximum Drain Source Voltage Vds

30V

Package Type

SOT-23

Series

TrenchFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.33Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

4nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

2.3W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

IEC 61249-2-21

Length

3.04mm

Width

1.4 mm

Height

1.02mm

Automotive Standard

No

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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