Vishay Si2309CDS Type P-Channel MOSFET, 1.2 A, -60 V Enhancement, 3-Pin SOT-23 SI2309CDS-T1-GE3
- RS Stock No.:
- 919-0262
- Mfr. Part No.:
- SI2309CDS-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 3000 units)*
PHP51,696.00
(exc. VAT)
PHP57,900.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- Plus 12,000 unit(s) shipping from August 10, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | PHP17.232 | PHP51,696.00 |
| 6000 - 6000 | PHP17.074 | PHP51,222.00 |
| 9000 - 15000 | PHP16.851 | PHP50,553.00 |
| 18000 - 24000 | PHP16.634 | PHP49,902.00 |
| 27000 + | PHP16.423 | PHP49,269.00 |
*price indicative
- RS Stock No.:
- 919-0262
- Mfr. Part No.:
- SI2309CDS-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 1.2A | |
| Maximum Drain Source Voltage Vds | -60V | |
| Package Type | SOT-23 | |
| Series | Si2309CDS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 345mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.7W | |
| Typical Gate Charge Qg @ Vgs | 2.7nC | |
| Forward Voltage Vf | -1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.02mm | |
| Length | 3.04mm | |
| Standards/Approvals | RoHS | |
| Width | 1.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 1.2A | ||
Maximum Drain Source Voltage Vds -60V | ||
Package Type SOT-23 | ||
Series Si2309CDS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 345mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.7W | ||
Typical Gate Charge Qg @ Vgs 2.7nC | ||
Forward Voltage Vf -1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Height 1.02mm | ||
Length 3.04mm | ||
Standards/Approvals RoHS | ||
Width 1.4mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay Si2309CDS Series MOSFET, -60V Drain Source Voltage, 1.2A Continuous Drain Current - SI2309CDS-T1-GE3
This p-channel MOSFET is a compact surface-mount transistor designed for switching and load-control tasks in small-footprint electronics. It operates as an enhancement-mode device suitable for low- to moderate-current applications where a P-channel topology is required. The package and materials support routine board-level assembly and use across a wide ambient temperature span.
Features and Benefits:
• Low on-resistance 345mΩ reduces conduction losses
• 60V drain rating enables higher-voltage switching
• Continuous drain current 1.2A supports modest load currents
• Gate charge 2.7nC allows faster switching transitions
• Power dissipation 1.7W manages thermal load under normal use
• 60V drain rating enables higher-voltage switching
• Continuous drain current 1.2A supports modest load currents
• Gate charge 2.7nC allows faster switching transitions
• Power dissipation 1.7W manages thermal load under normal use
Applications
• Suitable for handheld device high-side switching
• Ideal for battery protection and reverse-current blocking
• Used with power-management circuits in consumer electronics
• Can be used for signal-level load switching in control boards
• Ideal for battery protection and reverse-current blocking
• Used with power-management circuits in consumer electronics
• Can be used for signal-level load switching in control boards
What temperature range can it tolerate during operation?
It is specified to function between -55°C and 150°C, covering common industrial and consumer thermal environments.
How many pins and what mounting style does it use?
It has three terminals and is supplied in a surface-mount SOT-23 package for automated assembly.
What gate voltage limits should be observed in a design?
The gate-source voltage must not exceed ±20V to avoid damage to the gate oxide.
Are there any restrictions on automotive use?
It is not classified as an automotive-grade device, so designs requiring automotive approval should consider alternative qualified components.
Related links
- Vishay Si2309CDS Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 SI2309CDS-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- Vishay Si2343CDS Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Vishay Siliconix TrenchFET Type P-Channel MOSFET 40 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Vishay Si2333DDS Type P-Channel MOSFET 12 V Enhancement, 3-Pin SOT-23
- Vishay Si2305CDS Type P-Channel MOSFET 8 V Enhancement, 3-Pin SOT-23