IXYS X2-Class Type N-Channel MOSFET, 80 A, 650 V Enhancement, 3-Pin TO-247 IXTH80N65X2

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Packaging Options:
RS Stock No.:
917-1435
Distrelec Article No.:
302-53-425
Mfr. Part No.:
IXTH80N65X2
Manufacturer:
IXYS
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Brand

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-247

Series

X2-Class

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

38mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

137nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

890W

Maximum Gate Source Voltage Vgs

30 V

Forward Voltage Vf

1.4V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

5.21mm

Length

16.13mm

Width

21.34 mm

Distrelec Product Id

30253425

Automotive Standard

No

N-channel Power MOSFET, IXYS X2-Class Series


The IXYS X2 class Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.

Very low RDS(on) and QG (gate charge)

Intrinsic rectifier diode

Low intrinsic gate resistance

Low package inductance

Industry standard packages

MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

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