IXYS Type N-Channel MOSFET, 100 A, 650 V Enhancement, 3-Pin TO-264 IXFK100N65X2
- RS Stock No.:
- 917-1429
- Distrelec Article No.:
- 302-53-341
- Mfr. Part No.:
- IXFK100N65X2
- Manufacturer:
- IXYS
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Subtotal (1 unit)*
PHP986.48
(exc. VAT)
PHP1,104.86
(inc. VAT)
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In Stock
- Plus 213 unit(s) shipping from December 29, 2025
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Units | Per Unit |
|---|---|
| 1 - 4 | PHP986.48 |
| 5 - 9 | PHP956.88 |
| 10 - 24 | PHP928.16 |
| 25 - 74 | PHP900.30 |
| 75 + | PHP873.28 |
*price indicative
- RS Stock No.:
- 917-1429
- Distrelec Article No.:
- 302-53-341
- Mfr. Part No.:
- IXFK100N65X2
- Manufacturer:
- IXYS
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-264 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 30mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 183nC | |
| Maximum Power Dissipation Pd | 1.04kW | |
| Forward Voltage Vf | 1.4V | |
| Maximum Operating Temperature | 150°C | |
| Length | 20.3mm | |
| Standards/Approvals | No | |
| Width | 26.3 mm | |
| Height | 5.3mm | |
| Distrelec Product Id | 30253341 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-264 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 30mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 183nC | ||
Maximum Power Dissipation Pd 1.04kW | ||
Forward Voltage Vf 1.4V | ||
Maximum Operating Temperature 150°C | ||
Length 20.3mm | ||
Standards/Approvals No | ||
Width 26.3 mm | ||
Height 5.3mm | ||
Distrelec Product Id 30253341 | ||
Automotive Standard No | ||
N-channel Power MOSFET, IXYS HiPerFET™ X2 Series
The IXYS X2 class HiPerFET Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an enhanced high-speed intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.
Very low RDS(on) and QG (gate charge)
Fast intrinsic rectifier diode
Low intrinsic gate resistance
Low package inductance
Industry standard packages
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
Related links
- IXYS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-264
- IXYS Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-264
- IXYS Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-264
- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-264
- IXYS Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-264
- IXYS Type N-Channel MOSFET 300 V Enhancement, 3-Pin TO-264
- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-264
- IXYS Type N-Channel MOSFET 1200 V Enhancement, 3-Pin TO-264