IXYS HiperFET, Q-Class N-Channel MOSFET, 27 A, 800 V Enhancement, 3-Pin TO-264

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Subtotal (1 tube of 25 units)*

PHP43,417.70

(exc. VAT)

PHP48,627.83

(inc. VAT)

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In Stock
  • Plus 100 unit(s) shipping from November 02, 2026
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Units
Per Unit
Per Tube*
25 - 25PHP1,736.708PHP43,417.70
50 - 75PHP1,684.606PHP42,115.15
100 - 225PHP1,634.068PHP40,851.70
250 - 475PHP1,585.045PHP39,626.13
500 +PHP1,537.494PHP38,437.35

*price indicative

RS Stock No.:
920-0874
Mfr. Part No.:
IXFK27N80Q
Manufacturer:
IXYS
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Brand

IXYS

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

27A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-264

Series

HiperFET, Q-Class

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

320mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

500W

Typical Gate Charge Qg @ Vgs

170nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

-20V, +20V

Forward Voltage Vf

1.5V

Maximum Operating Temperature

150°C

Width

5.13mm

Standards/Approvals

No

Height

26.16mm

Length

19.96mm

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ Q Series


N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

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