N-Channel MOSFET, 100 A, 650 V, 3-Pin TO-264P IXYS IXTK102N65X2
- RS Stock No.:
- 917-1423
- Distrelec Article No.:
- 302-53-426
- Mfr. Part No.:
- IXTK102N65X2
- Manufacturer:
- IXYS
Subtotal (1 unit)**
PHP1,051.76
(exc. VAT)
PHP1,177.97
(inc. VAT)
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for over PHP7,000.00 (ex VAT)
Units | Per Unit |
---|---|
1 - 4 | PHP1,051.76 |
5 - 9 | PHP1,020.19 |
10 - 24 | PHP989.60 |
25 - 74 | PHP959.92 |
75 + | PHP931.12 |
**price indicative
- RS Stock No.:
- 917-1423
- Distrelec Article No.:
- 302-53-426
- Mfr. Part No.:
- IXTK102N65X2
- Manufacturer:
- IXYS
Select all | Attribute | Value |
---|---|---|
Manufacturer | IXYS | |
Channel Type | N | |
Maximum Continuous Drain Current | 100 A | |
Maximum Drain Source Voltage | 650 V | |
Series | X2-Class | |
Package Type | TO-264P | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 30 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 5V | |
Minimum Gate Threshold Voltage | 3V | |
Maximum Power Dissipation | 1.04 kW | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -30 V, +30 V | |
Number of Elements per Chip | 1 | |
Length | 20.3mm | |
Width | 26.3mm | |
Transistor Material | Si | |
Typical Gate Charge @ Vgs | 152 nC @ 10 V | |
Maximum Operating Temperature | +150 °C | |
Minimum Operating Temperature | -55 °C | |
Forward Diode Voltage | 1.4V | |
Height | 5.3mm | |
Select all | ||
---|---|---|
Manufacturer IXYS | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 650 V | ||
Series X2-Class | ||
Package Type TO-264P | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 30 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 1.04 kW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Number of Elements per Chip 1 | ||
Length 20.3mm | ||
Width 26.3mm | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 152 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.4V | ||
Height 5.3mm | ||
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