Name: Infineon HEXFET Type N-Channel MOSFET, 62 A, 30 V Enhancement, 3-Pin TO-220
Brand: Infineon
SKU: 913-4036
Price: 46.39 PHP
Availability: Discontinued

Specifications

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	62A
	Maximum Drain Source Voltage Vds	30V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	9mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1V
	Maximum Power Dissipation Pd	65W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	7.6nC
	Maximum Operating Temperature	175°C
	Height	9.02mm
	Standards/Approvals	No
	Width	4.83 mm
	Length	10.67mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 62A
	Maximum Drain Source Voltage Vds 30V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 9mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1V
	Maximum Power Dissipation Pd 65W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 7.6nC
	Maximum Operating Temperature 175°C
	Height 9.02mm
	Standards/Approvals No
	Width 4.83 mm
	Length 10.67mm
	Automotive Standard No

COO (Country of Origin):: MX

Infineon HEXFET Series MOSFET, 30V Maximum Drain Source Voltage, 62A Maximum Continuous Drain Current - IRLB8721PBF

This MOSFET is a high-performance switching device tailored for various applications in electronics and automation. With a robust TO-220AB package, it features a continuous drain current capacity of 62A and can handle a maximum drain-source voltage of 30V. The device operates efficiently across a wide temperature range from -55°C to +175°C, making it suitable for demanding environments.

Features & Benefits

• Supports high frequency synchronous buck converters

• Engineered for high current use efficiently

• Fully characterised for avalanche voltage and current

• Minimal gate charge enhances switching performance

• Versatile mounting options simplify integration into designs

Applications

• Used in UPS and inverter systems

• Effective in high-frequency isolated DC-DC converters

• Suitable for synchronous rectification in industrial solutions

• Key component in computer processor power supplies

What is the significance of the device's low Rds(on)?

The low Rds(on) significantly lowers conduction losses, improving overall efficiency in power conversion applications, which is crucial for maintaining performance in high current operations.

How does the maximum gate threshold voltage affect device performance?

The gate threshold voltage range of 1.35V to 2.35V ensures the device can be reliably controlled in various applications, providing flexibility in integration with different drive circuits.

What considerations should be made for thermal management in applications?

Given the maximum power dissipation of 65W, appropriate thermal management strategies must be implemented, such as using a suitable heatsink, to prevent overheating and ensure reliable operation.

Can this MOSFET be used in automotive applications?

Yes, it is designed to operate effectively in high-temperature environments, making it suitable for automotive applications where thermal variability is a concern.

Infineon HEXFET Type N-Channel MOSFET, 62 A, 30 V Enhancement, 3-Pin TO-220