Infineon HEXFET Type N-Channel MOSFET, 89 A, 55 V Enhancement, 3-Pin TO-220

RS Stock No.:: 919-4804
Mfr. Part No.:: IRL3705NPBF
Manufacturer:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 89 A, 55 V Enhancement, 3-Pin TO-220

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Subtotal (1 tube of 50 units)*

PHP4,606.00

(exc. VAT)

PHP5,158.50

(inc. VAT)

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In Stock

950 unit(s) ready to ship from another location

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Units	Per Unit	Per Tube*
50 - 50	PHP92.12	PHP4,606.00
100 - 150	PHP89.817	PHP4,490.85
200 - 450	PHP87.572	PHP4,378.60
500 - 950	PHP85.382	PHP4,269.10
1000 +	PHP83.248	PHP4,162.40

*price indicative

RS Stock No.:: 919-4804
Mfr. Part No.:: IRL3705NPBF
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	89A
	Maximum Drain Source Voltage Vds	55V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	10mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	16 V
	Maximum Power Dissipation Pd	170W
	Forward Voltage Vf	1.3V
	Typical Gate Charge Qg @ Vgs	98nC
	Maximum Operating Temperature	175°C
	Length	10.67mm
	Width	4.69 mm
	Height	9.02mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 89A
	Maximum Drain Source Voltage Vds 55V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 10mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 16 V
	Maximum Power Dissipation Pd 170W
	Forward Voltage Vf 1.3V
	Typical Gate Charge Qg @ Vgs 98nC
	Maximum Operating Temperature 175°C
	Length 10.67mm
	Width 4.69 mm
	Height 9.02mm
	Standards/Approvals No
	Automotive Standard No

COO (Country of Origin):: CN

Infineon HEXFET Series MOSFET, 89A Maximum Continuous Drain Current, 170W Maximum Power Dissipation - IRL3705NPBF

This N-channel MOSFET is engineered for high-performance applications, while providing enhanced efficiency and reliability. Utilising advanced HEXFET technology, it boasts minimal on-resistance and is suitable for various automation, electronics, and electrical applications. The device operates across a wide temperature range, ensuring effective performance in diverse environments.

Features & Benefits

• Low Rds(on) of 10mΩ for increased efficiency

• Operates in enhancement mode for innovative circuit designs

• Fast switching capabilities for improved system responsiveness

• Fully avalanche rated for durability in demanding situations

Applications

• Suitable for industrial power management systems

• Ideal for motor drive in automation

• Compatible with power supplies that require low thermal resistance

• Utilised in DC-DC converters for enhanced energy efficiency

What is the maximum power dissipation capability?

The maximum power dissipation is rated at 170W, facilitating effective thermal management under high load conditions.

Is it suitable for high temperatures?

This device can function within a temperature range of -55°C to +175°C, making it suitable for a variety of high-temperature scenarios.

What is the significance of the gate threshold voltage range?

The gate threshold voltage ranges from 1V to 2V, which is essential for determining the on/off states across various gate drive voltages.

What considerations are there for using this in a circuit?

Ensure that the gate-to-source voltage does not exceed ±16V to prevent damage and maintain optimal functionality.