N-Channel MOSFET, 20 A, 100 V, 3-Pin TO-220 Infineon IRFI540NPBF

RS Stock No.:: 541-2470
Distrelec Article No.:: 303-41-337
Mfr. Part No.:: IRFI540NPBF
Manufacturer:: Infineon

N-Channel MOSFET, 20 A, 100 V, 3-Pin TO-220 Infineon IRFI540NPBF

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RS Stock No.:: 541-2470
Distrelec Article No.:: 303-41-337
Mfr. Part No.:: IRFI540NPBF
Manufacturer:: Infineon

N-Channel Power MOSFET 100V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 20A Maximum Continuous Drain Current, 54W Maximum Power Dissipation - IRFI540NPBF

This MOSFET is developed for high-performance applications in the electronics industry, playing a crucial role in power management and providing a dependable solution for switching and amplifying electronic signals. It can manage significant voltage and current loads, ensuring efficiency in modern electronic devices.

Features & Benefits

• Continuous drain current rating up to 20A
• Voltage rating of 100V for durable performance
• Low gate threshold voltage enhances switching efficiency
• High power dissipation capability of up to 54W for durability
• N-channel enhancement mode design for a variety of applications
• Low drain-source resistance of 52 mΩ minimises energy loss

Applications

• Used in power supplies for electronic circuits
• Applicable in automotive power management systems
• Utilised in motor control systems for increased efficiency
• Important for power conversion in renewable energy systems
• Employed in automated machinery for effective control processes

What is the maximum continuous current rating for this device?

The device supports a maximum continuous drain current of 20A, accommodating various applications.

How does the gate threshold voltage affect performance?

The gate threshold voltage ranges from 2V to 4V, facilitating efficient switching at lower control voltages and enhancing performance.

Can this device operate in high-temperature environments?

Yes, it can function at temperatures reaching +175°C, ensuring performance in challenging conditions.

Is there a specific mounting type recommended for optimal performance?

It is suited for through-hole mounting, allowing secure connections and effective thermal management in different applications.

What advantages does low drain-source resistance provide?

The low drain-source resistance of 52 mΩ considerably lowers heat generation and improves efficiency, particularly in high-frequency switching applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	20 A
Maximum Drain Source Voltage	100 V
Package Type	TO-220
Series	HEXFET
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	52 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	54 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	94 nC @ 10 V
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Length	10.63mm
Width	4.83mm
Transistor Material	Si
Forward Diode Voltage	1.3V
Minimum Operating Temperature	-55 °C
Height	8.9mm