N-Channel MOSFET, 169 A, 55 V, 3-Pin TO-220AB Infineon IRF1405PBF
- RS Stock No.:
- 913-3831
- Mfr. Part No.:
- IRF1405PBF
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 tube of 50 units)**
PHP3,473.90
(exc. VAT)
PHP3,890.75
(inc. VAT)
450 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for over PHP7,000.00 (ex VAT)
Units | Per Unit | Per Tube** |
---|---|---|
50 - 50 | PHP69.478 | PHP3,473.90 |
100 - 150 | PHP67.394 | PHP3,369.70 |
200 - 450 | PHP65.372 | PHP3,268.60 |
500 - 950 | PHP63.411 | PHP3,170.55 |
1000 + | PHP61.509 | PHP3,075.45 |
**price indicative
- RS Stock No.:
- 913-3831
- Mfr. Part No.:
- IRF1405PBF
- Manufacturer:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Manufacturer | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 169 A | |
Maximum Drain Source Voltage | 55 V | |
Series | HEXFET | |
Package Type | TO-220AB | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 5 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 330 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Maximum Operating Temperature | +175 °C | |
Typical Gate Charge @ Vgs | 170 nC @ 10 V | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Minimum Operating Temperature | -55 °C | |
Height | 8.77mm | |
Select all | ||
---|---|---|
Manufacturer Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 169 A | ||
Maximum Drain Source Voltage 55 V | ||
Series HEXFET | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 330 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 170 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 8.77mm | ||
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