Infineon HEXFET Type N-Channel MOSFET, 169 A, 55 V Enhancement, 3-Pin TO-220

RS Stock No.:: 913-3831
Mfr. Part No.:: IRF1405PBF
Manufacturer:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 169 A, 55 V Enhancement, 3-Pin TO-220

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Bulk discount available

Subtotal (1 tube of 50 units)*

PHP3,390.80

(exc. VAT)

PHP3,797.70

(inc. VAT)

FREE delivery for orders over ₱3,000.00

In Stock

200 unit(s) ready to ship from another location

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Units	Per Unit	Per Tube*
50 - 50	PHP67.816	PHP3,390.80
100 - 150	PHP65.782	PHP3,289.10
200 - 450	PHP63.809	PHP3,190.45
500 - 950	PHP61.894	PHP3,094.70
1000 +	PHP60.037	PHP3,001.85

*price indicative

RS Stock No.:: 913-3831
Mfr. Part No.:: IRF1405PBF
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	169A
	Maximum Drain Source Voltage Vds	55V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	5mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	170nC
	Forward Voltage Vf	1.3V
	Maximum Power Dissipation Pd	330W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Length	10.67mm
	Standards/Approvals	No
	Height	8.77mm
	Width	4.83 mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 169A
	Maximum Drain Source Voltage Vds 55V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 5mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 170nC
	Forward Voltage Vf 1.3V
	Maximum Power Dissipation Pd 330W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Length 10.67mm
	Standards/Approvals No
	Height 8.77mm
	Width 4.83 mm
	Automotive Standard No

COO (Country of Origin):: PH

Infineon HEXFET Series MOSFET, 169A Maximum Continuous Drain Current, 330W Maximum Power Dissipation - IRF1405PBF

This MOSFET is intended for various applications, offering strong performance in power management solutions. With its robust specifications and advanced processing techniques, it is a key component in the automation and electronics sectors. Its capability to manage high currents and voltages makes it vital for numerous industrial processes.

Features & Benefits

• Maximum continuous drain current of 169A enhances durability

• Rated for 55V, ensuring operation under high voltage conditions

• Low on-resistance of 5mΩ minimises power loss during operation

• Fast switching capability increases system efficiency

• Features enhancement mode for optimal operation

Applications

• Used in industrial motor drives for efficient control

• Suitable for high-current in power supplies

• Ideal for automation equipment driving motors

• Effective in converters and inverters for renewable energy systems

What is the maximum gate-to-source voltage limit?

The maximum gate-to-source voltage is ±20V, ensuring safe operation.

How does this device handle thermal management?

It operates effectively up to 175°C, providing reliability in high-temperature conditions.

What factors should be considered during installation?

Ensure proper mounting torque and account for the thermal resistance of the heatsink to maintain efficient performance.

Can it be used in switching applications?

Yes, it features fast switching capabilities appropriate for high-speed applications, reducing response time.

What gate charge values can be expected during operation?

The typical gate charge is 170nC at 10V, facilitating quick turn-on and turn-off times.