Infineon HEXFET Type N-Channel MOSFET, 49 A, 55 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 919-4769
- Mfr. Part No.:
- IRFZ44NPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 50 units)*
PHP1,952.20
(exc. VAT)
PHP2,186.45
(inc. VAT)
FREE delivery for orders over ₱5,000.00
In Stock
- Plus 50 unit(s) shipping from August 31, 2026
- Plus 2,000 unit(s) shipping from October 01, 2026
- Plus 2,000 unit(s) shipping from February 11, 2027
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Units | Per Unit | Per Tube* |
|---|---|---|
| 50 - 50 | PHP39.044 | PHP1,952.20 |
| 100 - 150 | PHP37.873 | PHP1,893.65 |
| 200 - 450 | PHP36.737 | PHP1,836.85 |
| 500 - 950 | PHP35.635 | PHP1,781.75 |
| 1000 + | PHP34.566 | PHP1,728.30 |
*price indicative
- RS Stock No.:
- 919-4769
- Mfr. Part No.:
- IRFZ44NPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 49A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 17.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 94W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 4.4mm | |
| Length | 10.67mm | |
| Height | 8.77mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 49A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 17.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 94W | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 4.4mm | ||
Length 10.67mm | ||
Height 8.77mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 49A Maximum Continuous Drain Current, 94W Maximum Power Dissipation - IRFZ44NPBF
This MOSFET is designed for performance in automation, electronics, and electrical engineering applications. It can manage high current levels with low resistance, enhancing the efficiency of electronic circuits. With HEXFET technology, the device offers improved reliability and effectiveness in various environments.
Features & Benefits
• Utilises enhancement mode for responsive control
• Low resistance of 17.5mΩ for effective power management
• Fast switching speeds for improved system performance
Applications
• Suitable for DC-DC converters
• Motor drives and control systems
• Renewable energy systems, such as solar inverters
What impact does the low resistance have on performance?
The low on-resistance of 17.5mΩ enhances efficiency by minimising energy losses during operation, which is advantageous in high-current circuits.
How does temperature affect the continuous drain current?
Continuous drain current is rated at 49A at 25°C and decreases to 35A at 100°C, ensuring safe usage in varying environments.
Can this component handle repetitive avalanche conditions?
Yes, it is designed to withstand repetitive avalanche conditions with an avalanche current rating of up to 25A and an avalanche energy of 9.4mJ, providing additional durability.
What type of applications benefit most from using this MOSFET?
This component is particularly useful in high-power applications, including industrial automation controls and automotive systems requiring efficient energy conversion.
Is it compatible with standard PCB designs?
Yes, its TO-220AB package is widely used in various PCB layouts, allowing for straightforward integration into existing designs.
Related links
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220 IRFZ44NPBF
- Infineon HEXFET Type N-Channel MOSFET 55 V TO-262
- Infineon HEXFET Type N-Channel MOSFET 55 V TO-262 IRFZ44NSTRLPBF
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220