Infineon OptiMOS 5 Type N-Channel MOSFET, 45 A, 60 V Enhancement, 3-Pin TO-252 IPD053N06NATMA1
- RS Stock No.:
- 906-4491
- Mfr. Part No.:
- IPD053N06NATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
PHP707.17
(exc. VAT)
PHP792.03
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 4,480 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 10 | PHP70.717 | PHP707.17 |
| 20 - 90 | PHP68.595 | PHP685.95 |
| 100 - 190 | PHP65.852 | PHP658.52 |
| 200 - 490 | PHP62.559 | PHP625.59 |
| 500 + | PHP58.806 | PHP588.06 |
*price indicative
- RS Stock No.:
- 906-4491
- Mfr. Part No.:
- IPD053N06NATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | OptiMOS 5 | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 83W | |
| Typical Gate Charge Qg @ Vgs | 27nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.22 mm | |
| Standards/Approvals | No | |
| Height | 2.41mm | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series OptiMOS 5 | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 83W | ||
Typical Gate Charge Qg @ Vgs 27nC | ||
Maximum Operating Temperature 175°C | ||
Width 6.22 mm | ||
Standards/Approvals No | ||
Height 2.41mm | ||
Length 6.73mm | ||
Automotive Standard No | ||
RoHS Status: Exempt
Infineon OptiMOS™5 Power MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon OptiMOS 5 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS 5 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS 5 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 IPD025N06NATMA1
- Infineon OptiMOS 5 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS 5 Type N-Channel MOSFET 60 V Enhancement, 3-Pin PG-TO-220 FullPAK
- Infineon OptiMOS 5 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220 IPP020N06NAKSA1
- Infineon OptiMOS 5 Type N-Channel MOSFET 60 V Enhancement, 3-Pin PG-TO-220 FullPAK IPA029N06NM5SXKSA1
- Infineon OptiMOS-T2 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263