Infineon OptiMOS 5 N-Channel MOSFET, 90 A, 60 V Enhancement, 3-Pin TO-252 IPD025N06NATMA1
- RS Stock No.:
- 906-4485
- Mfr. Part No.:
- IPD025N06NATMA1
- Manufacturer:
- Infineon
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Units | Per Unit | Per Pack* |
|---|---|---|
| 4 - 4 | PHP202.028 | PHP808.11 |
| 8 - 36 | PHP184.053 | PHP736.21 |
| 40 - 76 | PHP157.43 | PHP629.72 |
| 80 - 196 | PHP141.873 | PHP567.49 |
| 200 + | PHP133.478 | PHP533.91 |
*price indicative
- RS Stock No.:
- 906-4485
- Mfr. Part No.:
- IPD025N06NATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 90A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 | |
| Series | OptiMOS 5 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.8mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 71nC | |
| Maximum Power Dissipation Pd | 167W | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.41mm | |
| Width | 6.22mm | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 90A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 | ||
Series OptiMOS 5 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.8mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 71nC | ||
Maximum Power Dissipation Pd 167W | ||
Maximum Operating Temperature 175°C | ||
Height 2.41mm | ||
Width 6.22mm | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Automotive Standard No | ||
RoHS Status: Exempt
Infineon OptiMOS 5 Series MOSFET, 60V Maximum Drain Source Voltage, 90A Maximum Continuous Drain Current - IPD025N06NATMA1
This n-channel enhancement MOSFET is a power transistor designed for surface-mounted electronics requiring robust switching and conduction at medium voltage levels. It operates across a wide temperature span and is intended for high-current applications where low conduction losses and moderate gate drive are required. The device is supplied in a TO-252 package suitable for automated assembly on densely populated boards.
Features and Benefits:
• 3.8mΩ Rds(on) reduces conduction losses for higher efficiency
• 90A continuous drain current supports heavy-load switching
• 60V drain-source rating enables medium-voltage designs
• 71nC typical gate charge minimises drive energy requirements
• 167W maximum power dissipation allows elevated power handling
• 20V gate-source limit permits robust gate‑drive margins
• 90A continuous drain current supports heavy-load switching
• 60V drain-source rating enables medium-voltage designs
• 71nC typical gate charge minimises drive energy requirements
• 167W maximum power dissipation allows elevated power handling
• 20V gate-source limit permits robust gate‑drive margins
Applications
• Suitable for synchronous buck converters in power supplies
• Ideal for motor‑drive half‑bridges in industrial controllers
• Used with battery‑management systems requiring high current
• Can be used for DC‑DC conversion in telecoms equipment
• Appropriate for power stages in server or storage electronics
• Ideal for motor‑drive half‑bridges in industrial controllers
• Used with battery‑management systems requiring high current
• Can be used for DC‑DC conversion in telecoms equipment
• Appropriate for power stages in server or storage electronics
What temperature range can it withstand during operation?
It is specified to operate from -55°C up to 175°C, accommodating hostile thermal environments.
How is it packaged for assembly and cooling?
The component is supplied in a TO-252 (DPAK) surface‑mount package designed for soldered board mounting and thermal transfer to heatsinking planes.
What gate‑drive considerations should I account for?
The gate-source voltage must not exceed 20V
drive circuits should be sized to deliver the typical 71nC gate charge for desired switching speeds.
How does its channel type affect switching behaviour?
As an N‑channel enhancement device it requires a positive gate voltage to conduct, providing low on‑resistance for efficient high‑current paths.
Related links
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