Infineon OptiMOS 5 Type N-Channel MOSFET, 112 A, 150 V Enhancement, 3-Pin TO-220 IPP076N15N5AKSA1

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Subtotal (1 pack of 5 units)*

PHP1,426.88

(exc. VAT)

PHP1,598.105

(inc. VAT)

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Units
Per Unit
Per Pack*
5 - 5PHP285.376PHP1,426.88
10 - 95PHP261.686PHP1,308.43
100 - 245PHP241.494PHP1,207.47
250 - 495PHP224.26PHP1,121.30
500 +PHP218.07PHP1,090.35

*price indicative

Packaging Options:
RS Stock No.:
214-4409
Mfr. Part No.:
IPP076N15N5AKSA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

112A

Maximum Drain Source Voltage Vds

150V

Series

OptiMOS 5

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

7.6mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

49nC

Maximum Power Dissipation Pd

214W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Maximum Operating Temperature

175°C

Height

4.4mm

Width

15.93 mm

Standards/Approvals

No

Length

10.2mm

Automotive Standard

No

The 600V Cool MOS P7 super junction MOSFET continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the Cool MOS™ 7th generation platform ensure its high efficiency.

It has rugged body diode

Integrated RG reduces MOSFET oscillation sensitivity

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