Infineon OptiMOS Type N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin TDSON BSC011N03LSATMA1
- RS Stock No.:
- 906-4280
- Mfr. Part No.:
- BSC011N03LSATMA1
- Manufacturer:
- Infineon
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Subtotal (1 pack of 10 units)*
PHP995.28
(exc. VAT)
PHP1,114.71
(inc. VAT)
FREE delivery for orders over ₱3,000.00
- Plus 7,740 unit(s) shipping from August 10, 2026
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 40 | PHP99.528 | PHP995.28 |
| 50 - 240 | PHP90.67 | PHP906.70 |
| 250 - 490 | PHP77.496 | PHP774.96 |
| 500 - 1240 | PHP69.864 | PHP698.64 |
| 1250 + | PHP65.739 | PHP657.39 |
*price indicative
- RS Stock No.:
- 906-4280
- Mfr. Part No.:
- BSC011N03LSATMA1
- Manufacturer:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | OptiMOS | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Maximum Power Dissipation Pd | 96W | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.1mm | |
| Standards/Approvals | No | |
| Length | 6.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series OptiMOS | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Maximum Power Dissipation Pd 96W | ||
Maximum Operating Temperature 150°C | ||
Height 1.1mm | ||
Standards/Approvals No | ||
Length 6.1mm | ||
Automotive Standard No | ||
RoHS Status: Exempt
Infineon OptiMOS Series MOSFET, 30V Maximum Drain Source Voltage, 100A Maximum Continuous Drain Current - BSC011N03LSATMA1
Features and Benefits:
• High continuous drain capability 100A handles heavy loads
• Peak power dissipation 96W supports elevated power transfer
• Low forward voltage 1V improves conversion efficiency
• Typical gate charge 36nC enables fast gate transitions
• Rated gate tolerance 20V protects against gate overstress
Applications
• Ideal for high-current motor-drive stages
• Used with power distribution modules in telecom racks
• Can be used for DC-DC power conversion in inverters
• Suitable for battery management and charging systems
What thermal limits should designers allow for under sustained operation?
How does the gate charge affect drive requirements?
What mounting considerations are necessary for reliable performance?
Which electrical ratings dictate maximum switching voltage and current?
Related links
- Infineon OptiMOS Type N-Channel MOSFET 30 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS Type N-Channel MOSFET 30 V Enhancement, 8-Pin TDSON BSC011N03LSIATMA1
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- Infineon OptiMOS Type N-Channel MOSFET 40 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS Type N-Channel MOSFET 100 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS Type N-Channel MOSFET 25 V Enhancement, 8-Pin TDSON BSC010NE2LSATMA1
- Infineon OptiMOS Type N-Channel MOSFET 40 V Enhancement, 8-Pin TDSON BSC014N04LSATMA1
- Infineon OptiMOS Type N-Channel MOSFET 100 V Enhancement, 8-Pin TDSON IAUC100N10S5N040ATMA1
