Infineon OptiMOS Type N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin TDSON BSC011N03LSIATMA1
- RS Stock No.:
- 906-4362
- Mfr. Part No.:
- BSC011N03LSIATMA1
- Manufacturer:
- Infineon
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Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 90 | PHP75.40 | PHP754.00 |
| 100 - 490 | PHP73.139 | PHP731.39 |
| 500 - 990 | PHP70.945 | PHP709.45 |
| 1000 - 2490 | PHP68.816 | PHP688.16 |
| 2500 + | PHP66.749 | PHP667.49 |
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- RS Stock No.:
- 906-4362
- Mfr. Part No.:
- BSC011N03LSIATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | OptiMOS | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Maximum Power Dissipation Pd | 96W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.7V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.1mm | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series OptiMOS | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Maximum Power Dissipation Pd 96W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.7V | ||
Maximum Operating Temperature 150°C | ||
Length 6.1mm | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Automotive Standard No | ||
RoHS Status: Exempt
Infineon OptiMOS Series MOSFET, 30V Maximum Drain Source Voltage, 100A Maximum Continuous Drain Current - BSC011N03LSIATMA1
This MOSFET is a power switching transistor designed for high-current, low-voltage applications in surface-mounted assemblies. It operates across a wide temperature span and is intended for use where efficient conduction and rapid gate control are required. The device is supplied in an eight-pin TDSON package and is intended to be mounted directly onto circuit board surfaces.
Features and Benefits:
• Very low on-resistance 1.4mΩ reduces conduction losses
• High continuous drain current 100A supports heavy loads
• Low forward voltage Vf 0.7V improves efficiency under load
• Moderate gate charge 34nC enables relatively fast switching
• Maximum drain-source voltage 30V allows low-voltage power stages
• Power dissipation 96W sustains elevated thermal stress
• High continuous drain current 100A supports heavy loads
• Low forward voltage Vf 0.7V improves efficiency under load
• Moderate gate charge 34nC enables relatively fast switching
• Maximum drain-source voltage 30V allows low-voltage power stages
• Power dissipation 96W sustains elevated thermal stress
Applications
• Suitable for synchronous buck converters in power supplies
• Ideal for motor-drive stages requiring high current
• Used with battery-management circuits in high-discharge systems
• Can be used for DC-DC converters in telecom equipment
• Used for high-current load switching on surface-mount boards
• Ideal for motor-drive stages requiring high current
• Used with battery-management circuits in high-discharge systems
• Can be used for DC-DC converters in telecom equipment
• Used for high-current load switching on surface-mount boards
What gate voltage limits should I observe for safe operation?
The gate-to-source rating is limited to 20V maximum, so gate drive should be kept within this range to prevent dielectric or gate-oxide stress.
How does thermal performance relate to ambient extremes?
The device is specified to operate from -55°C up to 150°C junction temperature, permitting use in environments with wide temperature variation provided adequate thermal management is applied.
What mounting and footprint considerations are required?
It is supplied in a TDSON package with eight pins for surface mounting
ensure PCB thermal vias and copper area accommodate the 96W dissipation and high current paths.
How does channel type influence circuit topology choices?
The N-channel enhancement mode requires the gate to be driven positive relative to source for conduction, making it suitable as a low-side switch or in synchronous arrangements.
Related links
- Infineon OptiMOS Type N-Channel MOSFET 30 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS Type N-Channel MOSFET 30 V Enhancement, 8-Pin TDSON BSC011N03LSATMA1
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