Infineon OptiMOS Type N-Channel MOSFET, 100 A, 40 V Enhancement, 8-Pin TDSON
- RS Stock No.:
- 170-2297
- Mfr. Part No.:
- BSC014N04LSATMA1
- Manufacturer:
- Infineon
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Units | Per Unit | Per Reel* |
|---|---|---|
| 5000 - 5000 | PHP44.973 | PHP224,865.00 |
| 10000 - 10000 | PHP43.624 | PHP218,120.00 |
| 15000 + | PHP42.315 | PHP211,575.00 |
*price indicative
- RS Stock No.:
- 170-2297
- Mfr. Part No.:
- BSC014N04LSATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TDSON | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 61nC | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 96W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | J-STD20 and JESD22 | |
| Length | 5.15mm | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TDSON | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 61nC | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 96W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals J-STD20 and JESD22 | ||
Length 5.15mm | ||
Height 1.1mm | ||
Automotive Standard No | ||
Infineon OptiMOS Series MOSFET, 40V Maximum Drain Source Voltage, 100A Maximum Continuous Drain Current - BSC014N04LSATMA1
This MOSFET is a high-current N-channel switching transistor designed for surface-mount power applications. It operates across a wide temperature span, supports substantial continuous drain currents and is intended for compact power conversion and high-efficiency switching tasks in industrial electronic systems.
Features and Benefits:
• 1.4mΩ low Rds(on) reduces conduction losses
• 100A continuous drain current enables high-current handling
• 40V drain-source rating permits mid-voltage power stages
• 61nC typical gate charge supports fast switching performance
• 96W maximum power dissipation allows significant thermal loading
• 20V maximum gate-source voltage accommodates robust gate drive
• 100A continuous drain current enables high-current handling
• 40V drain-source rating permits mid-voltage power stages
• 61nC typical gate charge supports fast switching performance
• 96W maximum power dissipation allows significant thermal loading
• 20V maximum gate-source voltage accommodates robust gate drive
Applications
• Suitable for DC-DC converter primary and secondary stages
• Ideal for high-current power rails in industrial equipment
• Used with synchronous buck converters for efficient switching
• Can be used for motor driver half-bridge modules
• Suitable for compact surface-mount power assemblies
• Ideal for high-current power rails in industrial equipment
• Used with synchronous buck converters for efficient switching
• Can be used for motor driver half-bridge modules
• Suitable for compact surface-mount power assemblies
What package and mounting method does it use?
It is supplied in an 8-pin TDSON package and intended for surface mounting to a board.
How does it cope with extended temperature ranges?
It is rated to operate from -55°C up to 150°C, enabling use in demanding thermal environments.
What gate-drive limitations should designers observe?
The device permits a maximum gate-source voltage of 20V, so gate drivers must remain within this limit.
What electrical polarity and channel behaviour does it follow?
It is an enhancement-mode N-channel device and requires positive gate drive to conduct.
Related links
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