Infineon OptiMOS 3 Type N-Channel MOSFET, 64 A, 250 V Enhancement, 3-Pin TO-263 IPB200N25N3GATMA1
- RS Stock No.:
- 898-6870
- Mfr. Part No.:
- IPB200N25N3GATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
PHP566.58
(exc. VAT)
PHP634.56
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 2,446 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 8 | PHP283.29 | PHP566.58 |
| 10 - 38 | PHP274.79 | PHP549.58 |
| 40 - 98 | PHP266.545 | PHP533.09 |
| 100 - 198 | PHP258.55 | PHP517.10 |
| 200 + | PHP250.795 | PHP501.59 |
*price indicative
- RS Stock No.:
- 898-6870
- Mfr. Part No.:
- IPB200N25N3GATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 64A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | TO-263 | |
| Series | OptiMOS 3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 300W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 64nC | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 4.57mm | |
| Length | 10.31mm | |
| Width | 9.45 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 64A | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type TO-263 | ||
Series OptiMOS 3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 300W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 64nC | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 4.57mm | ||
Length 10.31mm | ||
Width 9.45 mm | ||
Automotive Standard No | ||
RoHS Status: Not Applicable
Infineon OptiMOS™ 3 Series MOSFET, 64A Maximum Continuous Drain Current, 300W Maximum Power Dissipation - IPB200N25N3GATMA1
This N-channel MOSFET is designed for efficient power management in various electronic applications, featuring a maximum continuous drain current of 64A and a voltage rating of 250V. Its robust thermal performance and low on-resistance contribute to effective electrical performance across a wide temperature range, making it suitable for high-frequency switching and synchronous rectification.
Features & Benefits
• Optimal gate charge x RDS(on) product enhances efficiency
• Low on-resistance minimises power loss during operation
• Operational temperature up to +175°C accommodates diverse applications
• Complies with RoHS and halogen-free standards for eco-friendly use
• Compact D2PAK design and surface mount facilitate integration
• Qualified according to JEDEC for reliability in target applications
Applications
• Used in power supplies for automation systems
• Appropriate for high-efficiency converters in renewable energy
• Employed in motor control for industrial machinery
• Ideal for synchronous rectification in desktop power supplies
• Applied in electric vehicles for effective energy management
What measures should be taken to ensure optimal performance during installation?
It is important to maintain an effective thermal management system to dissipate heat, ensuring the device operates within its specified temperature limits.
Can this component be used in applications requiring Rapid switching?
Yes, it is suitable for high-frequency applications such as DC-DC converters and drivers due to its fast switching capabilities.
Is there a specific circuit design recommended for optimal use?
A proper gate driver circuit can enhance performance, particularly in terms of turn-on and turn-off times, which helps reduce switching losses.
What should be considered regarding environmental conditions during operation?
Ensure it is placed in an environment where temperatures remain within its operational limits of -55°C to +175°C to prevent thermal degradation.
How does this MOSFET perform under heavy load conditions?
It efficiently handles a continuous drain current of 64A while maintaining low on-resistance, thus reducing overheating and improving reliability under load.
Related links
- Infineon OptiMOS 3 Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS 3 Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS 3 Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-220 IPP200N25N3GXKSA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS 3 Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-263 IPB600N25N3GATMA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS 3 Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS 3 Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-263
