Infineon OptiMOS 3 Type N-Channel MOSFET, 25 A, 250 V Enhancement, 3-Pin TO-263 IPB600N25N3GATMA1

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PHP1,250.20

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PHP1,400.20

(inc. VAT)

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Units
Per Unit
Per Pack*
10 - 10PHP125.02PHP1,250.20
20 - 40PHP121.271PHP1,212.71
50 - 90PHP105.672PHP1,056.72
100 - 190PHP87.501PHP875.01
200 +PHP81.486PHP814.86

*price indicative

Packaging Options:
RS Stock No.:
826-9204
Mfr. Part No.:
IPB600N25N3GATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

25A

Maximum Drain Source Voltage Vds

250V

Series

OptiMOS 3

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

60mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

22nC

Maximum Power Dissipation Pd

136W

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Width

9.45 mm

Height

4.57mm

Standards/Approvals

No

Length

10.31mm

Automotive Standard

No

Infineon OptiMOS™3 Power MOSFETs, 100V and over


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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