Infineon OptiMOS 3 Type N-Channel MOSFET, 34 A, 200 V Enhancement, 3-Pin TO-263

RS Stock No.:: 911-4868
Mfr. Part No.:: IPB320N20N3GATMA1
Manufacturer:: Infineon

Infineon OptiMOS 3 Type N-Channel MOSFET, 34 A, 200 V Enhancement, 3-Pin TO-263

This image is representative of the product range

Subtotal (1 reel of 1000 units)*

PHP99,560.00

(exc. VAT)

PHP111,510.00

(inc. VAT)

FREE delivery for orders over ₱3,000.00

In Stock

Plus 1,000 unit(s) shipping from August 10, 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per Unit	Per Reel*
1000 +	PHP99.56	PHP99,560.00

*price indicative

RS Stock No.:: 911-4868
Mfr. Part No.:: IPB320N20N3GATMA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	34A
	Maximum Drain Source Voltage Vds	200V
	Series	OptiMOS 3
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	32mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	22nC
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	136W
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Length	10.31mm
	Height	4.57mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 34A
	Maximum Drain Source Voltage Vds 200V
	Series OptiMOS 3
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 32mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 22nC
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 136W
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Length 10.31mm
	Height 4.57mm
	Automotive Standard No

COO (Country of Origin):: DE

Infineon OptiMOS 3 Series MOSFET, 200V Maximum Drain Source Voltage, 34A Maximum Continuous Drain Current - IPB320N20N3GATMA1

This MOSFET is a power semiconductor device designed for switching and amplification tasks in demanding electronic systems. It operates as an enhanced N-channel transistor and is intended for surface-mounted assemblies where robust power handling and gate control are required. The device combines moderate forward voltage characteristics with a gate charge profile suited to applications requiring precise drive control across a wide ambient temperature range.

Features and Benefits:

• 200V drain rating supports high-voltage switching applications
• 34A continuous current enables substantial load handling
• 32mΩ low Rds(on) reduces conduction losses during operation
• 136W maximum dissipation handles elevated power scenarios
• 22nC typical gate charge allows efficient gate-drive timing
• ±20V gate tolerance improves resilience to gate excursions

Applications

• Suitable for high-voltage DC-DC converters
• Ideal for motor-drive inverter stages
• Used with power supplies in industrial automation
• Can be used for switch-mode power amplifiers
• Suitable for high-power lighting control systems

What package style does it use and why does that matter?

It is supplied in a TO-263 package which offers a compact, low-profile form for surface mounting while providing a robust thermal path for heat removal in high-dissipation circuits.

What temperature extremes can it withstand during operation?

The device is specified to operate from -55°C up to 175°C, enabling use in environments with severe cold or elevated thermal stress without derating below those limits.

How does the forward voltage affect circuit design?

With a forward Vf of 1.2V, designers can predict conduction drop and power loss at given currents, aiding thermal management and selection of heatsinking or PCB copper for adequate dissipation.

What gate handling considerations are there for driving the device?

The typical gate charge of 22nC and maximum gate-source voltage of 20V dictate the required gate-driver strength and protection schemes to achieve desired switching speed while avoiding gate overvoltage.