Infineon OptiMOS 3 Type N-Channel MOSFET, 34 A, 200 V Enhancement, 3-Pin TO-263

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Subtotal (1 reel of 1000 units)*

PHP99,560.00

(exc. VAT)

PHP111,510.00

(inc. VAT)

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1000 +PHP99.56PHP99,560.00

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RS Stock No.:
911-4868
Mfr. Part No.:
IPB320N20N3GATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

34A

Maximum Drain Source Voltage Vds

200V

Series

OptiMOS 3

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

32mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

22nC

Maximum Power Dissipation Pd

136W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Length

10.31mm

Standards/Approvals

No

Height

4.57mm

Width

9.45 mm

Automotive Standard

No

COO (Country of Origin):
DE

Infineon OptiMOS™3 Power MOSFETs, 100V and over


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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