Infineon HEXFET Type N-Channel MOSFET, 2.6 A, 150 V Enhancement, 4-Pin SOT-223 IRFL4315TRPBF
- RS Stock No.:
- 865-5822
- Distrelec Article No.:
- 304-44-459
- Mfr. Part No.:
- IRFL4315TRPBF
- Manufacturer:
- Infineon
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PHP405.00
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PHP453.60
(inc. VAT)
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Units | Per Unit | Per Reel* |
|---|---|---|
| 10 - 10 | PHP40.50 | PHP405.00 |
| 20 - 40 | PHP36.451 | PHP364.51 |
| 50 - 90 | PHP32.806 | PHP328.06 |
| 100 - 190 | PHP29.526 | PHP295.26 |
| 200 + | PHP26.574 | PHP265.74 |
*price indicative
- RS Stock No.:
- 865-5822
- Distrelec Article No.:
- 304-44-459
- Mfr. Part No.:
- IRFL4315TRPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.6A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | HEXFET | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 185mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2.8W | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 3.7mm | |
| Height | 1.8mm | |
| Length | 6.7mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.6A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series HEXFET | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 185mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2.8W | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 3.7mm | ||
Height 1.8mm | ||
Length 6.7mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 2.6A Maximum Continuous Drain Current, 2.8W Maximum Power Dissipation - IRFL4315TRPBF
This MOSFET is suitable for power applications, delivering solid performance and enhanced reliability in various environments. As a key component in switching applications, it enables efficient control of power delivery. Its surface mount design makes it a good fit for high-performance circuits that require low gate-to-drain charge, minimising switching losses, which is beneficial for users in the automation and electronics industries.
Features & Benefits
• Continuous drain current rating of 2.6A accommodates a range of applications
• Maximum drain-source voltage of 150V facilitates high-power operations
• Low Rds(on) of 185mΩ improves energy efficiency
• Operating temperature range from -55°C to +150°C supports dependable performance
• Gate threshold voltage is optimised for easier circuit design
• Fully characterised avalanche characteristics provide additional protection
Applications
• High-frequency DC-DC converters
• Power management systems for improved efficiency
• Switching power supplies for enhanced performance
What is the significance of the low Rds(on) value?
A low Rds(on) reduces power losses during operation, improving overall efficiency across multiple applications.
How does the wide temperature range affect usage?
The wide operating temperature range ensures reliable performance in extreme conditions, making it suitable for diverse environments.
Can it be used in both high and low-frequency applications?
Yes, it accommodates both high-frequency DC-DC converters and applications requiring low-frequency switching.
What should be considered for installation?
Proper circuit layout and thermal management should be taken into account to optimise performance during installation.
How does the gate threshold voltage impact circuit design?
The gate threshold voltage allows for better control over switching behaviour, facilitating easier design of the driving circuit.
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