Infineon HEXFET Type N-Channel MOSFET, 2.6 A, 150 V Enhancement, 4-Pin SOT-223

RS Stock No.:: 165-5560
Mfr. Part No.:: IRFL4315TRPBF
Manufacturer:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 2.6 A, 150 V Enhancement, 4-Pin SOT-223

This image is representative of the product range

Subtotal (1 reel of 2500 units)*

PHP48,015.00

(exc. VAT)

PHP53,777.50

(inc. VAT)

FREE delivery for orders over ₱3,000.00

In Stock

Plus 5,000 unit(s) shipping from December 29, 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per Unit	Per Reel*
2500 +	PHP19.206	PHP48,015.00

*price indicative

RS Stock No.:: 165-5560
Mfr. Part No.:: IRFL4315TRPBF
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	2.6A
	Maximum Drain Source Voltage Vds	150V
	Series	HEXFET
	Package Type	SOT-223
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	185mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	12nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	2.8W
	Forward Voltage Vf	1.5V
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Operating Temperature	150°C
	Width	3.7 mm
	Length	6.7mm
	Standards/Approvals	No
	Height	1.8mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 2.6A
	Maximum Drain Source Voltage Vds 150V
	Series HEXFET
	Package Type SOT-223
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 185mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 12nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 2.8W
	Forward Voltage Vf 1.5V
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Operating Temperature 150°C
	Width 3.7 mm
	Length 6.7mm
	Standards/Approvals No
	Height 1.8mm
	Automotive Standard No

COO (Country of Origin):: MY

Infineon HEXFET Series MOSFET, 2.6A Maximum Continuous Drain Current, 2.8W Maximum Power Dissipation - IRFL4315TRPBF

This MOSFET is suitable for power applications, delivering solid performance and enhanced reliability in various environments. As a key component in switching applications, it enables efficient control of power delivery. Its surface mount design makes it a good fit for high-performance circuits that require low gate-to-drain charge, minimising switching losses, which is beneficial for users in the automation and electronics industries.

Features & Benefits

• Continuous drain current rating of 2.6A accommodates a range of applications

• Maximum drain-source voltage of 150V facilitates high-power operations

• Low Rds(on) of 185mΩ improves energy efficiency

• Operating temperature range from -55°C to +150°C supports dependable performance

• Gate threshold voltage is optimised for easier circuit design

• Fully characterised avalanche characteristics provide additional protection

Applications

• High-frequency DC-DC converters

• Power management systems for improved efficiency

• Switching power supplies for enhanced performance

What is the significance of the low Rds(on) value?

A low Rds(on) reduces power losses during operation, improving overall efficiency across multiple applications.

How does the wide temperature range affect usage?

The wide operating temperature range ensures reliable performance in extreme conditions, making it suitable for diverse environments.

Can it be used in both high and low-frequency applications?

Yes, it accommodates both high-frequency DC-DC converters and applications requiring low-frequency switching.

What should be considered for installation?

Proper circuit layout and thermal management should be taken into account to optimise performance during installation.

How does the gate threshold voltage impact circuit design?

The gate threshold voltage allows for better control over switching behaviour, facilitating easier design of the driving circuit.