Infineon HEXFET Type N-Channel MOSFET, 161 A, 30 V Enhancement, 3-Pin TO-252 IRLR7843TRPBF
- RS Stock No.:
- 830-3382
- Distrelec Article No.:
- 304-37-849
- Mfr. Part No.:
- IRLR7843TRPBF
- Manufacturer:
- Infineon
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PHP684.30
(exc. VAT)
PHP766.40
(inc. VAT)
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In Stock
- Plus 30 unit(s) shipping from August 31, 2026
- Plus 13,320 unit(s) shipping from September 07, 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 10 | PHP68.43 | PHP684.30 |
| 20 - 40 | PHP66.377 | PHP663.77 |
| 50 - 90 | PHP64.387 | PHP643.87 |
| 100 - 190 | PHP62.457 | PHP624.57 |
| 200 + | PHP60.583 | PHP605.83 |
*price indicative
- RS Stock No.:
- 830-3382
- Distrelec Article No.:
- 304-37-849
- Mfr. Part No.:
- IRLR7843TRPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 161A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HEXFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 140W | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.39mm | |
| Length | 6.73mm | |
| Width | 6.22mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 161A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HEXFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 140W | ||
Maximum Operating Temperature 175°C | ||
Height 2.39mm | ||
Length 6.73mm | ||
Width 6.22mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 161A Maximum Continuous Drain Current, 140W Maximum Power Dissipation - IRLR7843TRPBF
This MOSFET is tailored for high-performance applications in the electrical and electronics sectors, especially suitable for automotive and industrial needs. Its HEXFET technology ensures impressive efficiency and reliability, making it Ideal for high-frequency synchronous buck converters and isolated DC-DC converters. The device effectively manages power dissipation, enhancing the performance of electronic systems.
Features & Benefits
• Extremely low RDS(on) optimises power loss and efficiency
• High continuous drain current rating supports intensive applications
• Designed for high operating temperatures to ensure performance
• Lead-free construction meets environmentally conscious design standards
• Low gate charge improves switching behaviour in circuits
Applications
• Used in high-frequency synchronous buck converters
• Employed in isolated DC-DC converters for telecom systems
• Serves automotive power management systems
• Suitable for industrial power supplies requiring enhanced efficiency
• Ideal for power regulation in computer processors
What are the typical thermal performance characteristics?
The maximum operating temperature is +175°C with a thermal resistance of 50°C/W from junction to ambient, ensuring effective performance in thermal environments.
How does the low RDS(on) affect overall circuit design?
Low RDS(on) reduces conduction losses, leading to improved efficiency under varying load conditions, which is Crucial for high-performance designs.
Can it handle Pulse currents effectively?
Yes, it can accommodate pulsed drain currents of up to 620 A, ensuring operational reliability under dynamic loads.
What mounting methods are compatible with this component?
As a surface mount component in DPAK package, it is suitable for automated assembly processes.
Is it suitable for use in automotive applications?
Yes, its specifications, including a maximum drain-source voltage rating of 30V, make it fitting for automotive power systems.
Related links
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 3-Pin TO-252
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- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252