Infineon HEXFET Type N-Channel MOSFET, 86 A, 30 V Enhancement, 3-Pin TO-252

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RS Stock No.:
217-2621
Mfr. Part No.:
IRFR3709ZTRPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

86A

Maximum Drain Source Voltage Vds

30V

Series

HEXFET

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

8.2mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

17nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

79W

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

6.37mm

Height

2.39mm

Width

6.22 mm

Automotive Standard

No

The Infineon 30V Single N-Channel HEXFET Power MOSFET in a D-Pak package.

Very Low RDS(on) at 4.5V VGS

Ultra-Low Gate Impedance

Fully Characterized Avalanche Voltage

and Current

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