Infineon HEXFET Type N-Channel MOSFET, 6.5 A, 20 V Enhancement, 6-Pin Micro6 IRLMS2002TRPBF

RS Stock No.:: 830-3326
Mfr. Part No.:: IRLMS2002TRPBF
Manufacturer:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 6.5 A, 20 V Enhancement, 6-Pin Micro6 IRLMS2002TRPBF

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Bulk discount available

Subtotal (1 pack of 30 units)*

PHP770.28

(exc. VAT)

PHP862.71

(inc. VAT)

FREE delivery for orders over ₱3,000.00

Last RS stock

Final 780 unit(s), ready to ship from another location

Units	Per Unit	Per Pack*
30 - 30	PHP25.676	PHP770.28
60 - 120	PHP23.59	PHP707.70
150 - 270	PHP22.535	PHP676.05
300 - 570	PHP21.256	PHP637.68
600 +	PHP19.667	PHP590.01

*price indicative

RS Stock No.:: 830-3326
Mfr. Part No.:: IRLMS2002TRPBF
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	6.5A
	Maximum Drain Source Voltage Vds	20V
	Series	HEXFET
	Package Type	Micro6
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	45mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	12 V
	Typical Gate Charge Qg @ Vgs	15nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	2W
	Maximum Operating Temperature	150°C
	Width	1.75 mm
	Length	3mm
	Height	1.3mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 6.5A
	Maximum Drain Source Voltage Vds 20V
	Series HEXFET
	Package Type Micro6
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 45mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 12 V
	Typical Gate Charge Qg @ Vgs 15nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 2W
	Maximum Operating Temperature 150°C
	Width 1.75 mm
	Length 3mm
	Height 1.3mm
	Standards/Approvals No
	Automotive Standard No

RoHS Status: Exempt

COO (Country of Origin):: TH

Infineon HEXFET Series MOSFET, 6.5A Maximum Continuous Drain Current, 2W Maximum Power Dissipation - IRLMS2002TRPBF

This N-channel MOSFET is designed for effective performance in battery management and load management applications. Its Ability to provide low on-resistance alongside high temperature resilience contributes to efficient operation across diverse electronic systems. With state-of-the-art processing techniques, this product is Ideal for professionals in the automation, electronics, and electrical sectors.

Features & Benefits

• Surface mount design minimises PCB space usage

• Low on-resistance enhances power efficiency

• Continuous drain current capability of up to 6.5A

• Supports ±12V gate-to-source voltage for flexible control

• Efficient thermal performance reduces heat generation

Applications

• Battery management for optimal energy distribution

• Load management in various electronic devices

• Automotive requiring robust power handling

• High-efficiency power supply systems

• Renewable energy systems for energy regulation

What is the maximum continuous drain current at elevated temperatures?

At a temperature of 70°C, a continuous drain current of 5.2A can be achieved while maintaining stability under specified conditions.

What is the thermal resistance for effective performance?

The maximum junction-to-ambient thermal resistance is 62.5°C/W, ensuring effective heat dissipation during operation.

How do I ensure optimum performance during installation?

Proper thermal management and careful consideration of PCB layout are essential for optimal performance, allowing for efficient heat dissipation and reliability.

What voltage can be applied without risking breakdown?

The maximum drain-source voltage is 20V, which serves as a critical threshold to prevent unnecessary breakdown during operation.

Is there a specific thermal derating factor to consider?

Yes, the linear derating factor is 0.016W/°C, indicating that power dissipation must be adjusted based on ambient temperature to maintain reliability.