Infineon HEXFET Type N-Channel MOSFET, 21 A, 60 V Enhancement, 6-Pin DirectFET AUIRF7640S2TR
- RS Stock No.:
- 215-2448
- Mfr. Part No.:
- AUIRF7640S2TR
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 20 units)*
PHP1,550.40
(exc. VAT)
PHP1,736.40
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 3,020 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 20 - 20 | PHP77.52 | PHP1,550.40 |
| 40 - 80 | PHP71.047 | PHP1,420.94 |
| 100 - 220 | PHP65.618 | PHP1,312.36 |
| 240 - 480 | PHP60.932 | PHP1,218.64 |
| 500 + | PHP59.22 | PHP1,184.40 |
*price indicative
- RS Stock No.:
- 215-2448
- Mfr. Part No.:
- AUIRF7640S2TR
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | DirectFET | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 36mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 30W | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 7.3nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type DirectFET | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 36mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 30W | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 7.3nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon Automotive DirectFET® Power MOSFET series has 60V maximum drain source voltage with 20A maximum continuous drain current in a DirectFET Small Can package. The AUIRF7640S2TR/TR1 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging platform to produce a best in class part for Automotive Class D audio amplifier applications. The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive power systems.
Advanced Process Technology
Optimized for Class D Audio Amplifier and High Speed Switching Applications
Low Rds(on) for Improved Efficiency
Repetitive Avalanche Capability for Robustness and Reliability
Lead free, RoHS and Halogen free
Related links
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