Infineon HEXFET Type N-Channel MOSFET, 522 A, 40 V Enhancement, 6-Pin TO-263
- RS Stock No.:
- 165-5324
- Mfr. Part No.:
- IRFS7430TRL7PP
- Manufacturer:
- Infineon
This image is representative of the product range
Subtotal (1 reel of 800 units)*
PHP92,628.80
(exc. VAT)
PHP103,744.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 4,800 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 800 + | PHP115.786 | PHP92,628.80 |
*price indicative
- RS Stock No.:
- 165-5324
- Mfr. Part No.:
- IRFS7430TRL7PP
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 522A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 750μΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 375W | |
| Forward Voltage Vf | 0.8V | |
| Typical Gate Charge Qg @ Vgs | 305nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.83mm | |
| Standards/Approvals | No | |
| Width | 9.65 mm | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 522A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 750μΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 375W | ||
Forward Voltage Vf 0.8V | ||
Typical Gate Charge Qg @ Vgs 305nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 4.83mm | ||
Standards/Approvals No | ||
Width 9.65 mm | ||
Length 10.67mm | ||
Automotive Standard No | ||
RoHS Status: Not Applicable
- COO (Country of Origin):
- MX
N-Channel Power MOSFET 40V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 6-Pin TO-263 IRFS7430TRL7PP
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 7-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 7-Pin TO-263 AUIRFS8409-7TRL
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET & Diode 40 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET & Diode 40 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-263