N-Channel MOSFET, 250 A, 40 V, 3-Pin D2PAK Infineon IRFS7437TRLPBF

RS Stock No.:: 165-5484
Mfr. Part No.:: IRFS7437TRLPBF
Manufacturer:: Infineon

N-Channel MOSFET, 250 A, 40 V, 3-Pin D2PAK Infineon IRFS7437TRLPBF

This image is representative of the product range

Subtotal (1 reel of 800 units)**

PHP43,590.40

(exc. VAT)

PHP48,821.60

(inc. VAT)

2400 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for over PHP7,000.00 (ex VAT)

Units	Per Unit	Per Reel**
800 +	PHP54.488	PHP43,590.40

**price indicative

RS Stock No.:: 165-5484
Mfr. Part No.:: IRFS7437TRLPBF
Manufacturer:: Infineon

N-Channel Power MOSFET 40V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 250A Maximum Continuous Drain Current, 230W Maximum Power Dissipation - IRFS7437TRLPBF

This MOSFET is intended for high-performance applications that require efficient power management. It is utilised across various sectors and offers robust features suitable for challenging environments. Its ability to manage high current and voltage levels makes it well-suited for advanced technology applications.

Features & Benefits

• Supports a maximum continuous drain current of 250A for high-power applications
• Offers a maximum drain-source voltage of 40V, ensuring reliability in different setups
• Exhibits low Rds(on) of 1.4mΩ, contributing to reduced power losses
• Designed for surface mounting, simplifying installation
• Capable of handling rapid switching applications, which enhances efficiency

Applications

• Suitable for brushed motor drive
• Ideal for battery-powered circuits, enabling efficient power usage
• Employed in half-bridge and full-bridge topologies for precise control
• Utilised in synchronous rectifier to enhance energy savings
• Applicable in resonant mode power supplies for stable performance

How is the power dissipation managed during operation?

Power dissipation is managed through a maximum rating of 230W, ensuring thermal stability under high load conditions.

What is the significance of the low Rds(on) value?

The low Rds(on) value minimises energy loss during operation, improving efficiency in high-current applications.

Can this be used in high-temperature environments?

With an operating temperature range of -55°C to +175°C, it is suitable for diverse applications, including high-temperature environments.

What installation considerations should I be aware of?

Ensure proper thermal management as per specifications to maintain operational efficiency and reliability during intense applications.

Is it compatible with various power supply designs?

Yes, the MOSFET is versatile and can be integrated into numerous power supply designs, providing adaptability across different projects.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	250 A
Maximum Drain Source Voltage	40 V
Package Type	D2PAK (TO-263)
Series	HEXFET
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	1.8 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.9V
Minimum Gate Threshold Voltage	2.2V
Maximum Power Dissipation	230 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	9.65mm
Transistor Material	Si
Number of Elements per Chip	1
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	150 nC @ 10 V
Length	10.67mm
Minimum Operating Temperature	-55 °C
Height	4.83mm
Forward Diode Voltage	1.3V