Infineon HEXFET Type N-Channel MOSFET & Diode, 270 A, 40 V Enhancement, 3-Pin TO-263
- RS Stock No.:
- 220-7342
- Mfr. Part No.:
- AUIRF2804STRL
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 800 units)*
PHP138,600.00
(exc. VAT)
PHP155,232.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 4,800 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 800 - 800 | PHP173.25 | PHP138,600.00 |
| 1600 - 1600 | PHP166.587 | PHP133,269.60 |
| 2400 + | PHP164.478 | PHP131,582.40 |
*price indicative
- RS Stock No.:
- 220-7342
- Mfr. Part No.:
- AUIRF2804STRL
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 270A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 160nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 300W | |
| Maximum Operating Temperature | 175°C | |
| Width | 9.65 mm | |
| Height | 4.83mm | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 270A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 160nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 300W | ||
Maximum Operating Temperature 175°C | ||
Width 9.65 mm | ||
Height 4.83mm | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Infineon offers a wide range of 20V-40V N-channel automotive qualified power MOSFETs using the new OptiMOS technology in a variety of packages to meet a range of needs and achieving RDS(on) down to 0.6mΩ.The new OptiMOS 6 and Optimos5 40V benchmark MOSFET technology enables low conduction losses (best in Class RDSon performance), low switching losses (improved switching behaviour), improved diode recovery and EMC behaviour. This MOSFET technology is used in the most advanced and innovative packages in order to reach the best product performances and quality. For ultimate design flexibility, automotive-qualified MOSFETs are available in a variety of packages to meet a range of needs. Infineon offer customers a steady stream of improvements in current capability, switching behaviour, reliability, package size and overall quality. The newly developed integrated half-bridge is an innovative and cost efficient package solution for motor drive and body applications.
Advanced process technology
Ultra-low on-resistance
175°C operating temperature
Fast switching
Repetitive avalanche allowed up to Tjmax
Related links
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