Infineon HEXFET Type N-Channel MOSFET, 250 A, 40 V Enhancement, 3-Pin TO-263 IRFS7437TRLPBF

RS Stock No.:: 872-4206
Mfr. Part No.:: IRFS7437TRLPBF
Manufacturer:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 250 A, 40 V Enhancement, 3-Pin TO-263 IRFS7437TRLPBF

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Subtotal (1 pack of 10 units)*

PHP737.20

(exc. VAT)

PHP825.70

(inc. VAT)

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In Stock

2,400 unit(s) ready to ship from another location

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Units	Per Unit	Per Pack*
10 - 10	PHP73.72	PHP737.20
20 - 40	PHP71.509	PHP715.09
50 - 90	PHP69.365	PHP693.65
100 - 190	PHP67.284	PHP672.84
200 +	PHP65.266	PHP652.66

*price indicative

RS Stock No.:: 872-4206
Mfr. Part No.:: IRFS7437TRLPBF
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	250A
	Maximum Drain Source Voltage Vds	40V
	Package Type	TO-263
	Series	HEXFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.8mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	230W
	Forward Voltage Vf	1V
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	150nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Width	9.65 mm
	Length	10.67mm
	Height	4.83mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 250A
	Maximum Drain Source Voltage Vds 40V
	Package Type TO-263
	Series HEXFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.8mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 230W
	Forward Voltage Vf 1V
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 150nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Width 9.65 mm
	Length 10.67mm
	Height 4.83mm
	Automotive Standard No

RoHS Status: Not Applicable

Infineon HEXFET Series MOSFET, 250A Maximum Continuous Drain Current, 230W Maximum Power Dissipation - IRFS7437TRLPBF

This MOSFET is intended for high-performance applications that require efficient power management. It is utilised across various sectors and offers robust features suitable for challenging environments. Its Ability to manage high current and voltage levels makes it well-suited for Advanced technology applications.

Features & Benefits

• Supports a maximum continuous drain current of 250A for high-power applications

• Offers a maximum drain-source voltage of 40V, ensuring reliability in different setups

• Exhibits low Rds(on) of 1.4mΩ, contributing to reduced power losses

• Designed for surface mounting, simplifying installation

• Capable of handling Rapid switching applications, which enhances efficiency

Applications

• Suitable for brushed motor drive

• Ideal for battery-powered circuits, enabling efficient power usage

• Employed in half-bridge and full-bridge topologies for precise control

• Utilised in synchronous rectifier to enhance energy savings

• Applicable in resonant mode power supplies for stable performance

How is the power dissipation managed during operation?

Power dissipation is managed through a maximum rating of 230W, ensuring thermal stability under high load conditions.

What is the significance of the low Rds(on) value?

The low Rds(on) Value minimises energy loss during operation, improving efficiency in high-current applications.

Can this be used in high-temperature environments?

With an operating temperature range of -55°C to +175°C, it is suitable for diverse applications, including high-temperature environments.

What installation considerations should I be aware of?

Ensure proper thermal management as per specifications to maintain operational efficiency and reliability during intense applications.

Is it compatible with various power supply designs?

Yes, the MOSFET is versatile and can be integrated into numerous power supply designs, providing adaptability across different projects.