Infineon HEXFET Type N-Channel MOSFET, 522 A, 40 V Enhancement, 7-Pin TO-263 AUIRFS8409-7TRL
- RS Stock No.:
- 215-2454
- Mfr. Part No.:
- AUIRFS8409-7TRL
- Manufacturer:
- Infineon
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Subtotal (1 pack of 5 units)*
PHP1,738.52
(exc. VAT)
PHP1,947.14
(inc. VAT)
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- 795 left, ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 5 | PHP347.704 | PHP1,738.52 |
| 10 - 95 | PHP318.752 | PHP1,593.76 |
| 100 - 245 | PHP294.23 | PHP1,471.15 |
| 250 - 495 | PHP273.104 | PHP1,365.52 |
| 500 + | PHP265.54 | PHP1,327.70 |
*price indicative
- RS Stock No.:
- 215-2454
- Mfr. Part No.:
- AUIRFS8409-7TRL
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 522A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 0.75mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 375W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 305nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 522A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 0.75mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 375W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 305nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon Automotive DirectFET® Power MOSFET has 60V maximum drain source voltage with 68A maximum continuous drain current in a D2-Pak 7pin package. specifically designed for automotive application, this HEXFET power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance par silicon area. Additional features of these designs are 175°C junction operating temperature, fast switching speed and improve repetitive avalanche rating. This feature combined to make this product an extremely efficient and reliable device for use in automotive and wide variety of other applications.
Advanced Process Technology
New Ultra Low On-Resistance
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead free
Related links
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