Infineon HEXFET Type N-Channel MOSFET, 600 mA, 200 V Enhancement, 6-Pin TSOP
- RS Stock No.:
- 919-4725
- Mfr. Part No.:
- IRF5801TRPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 3000 units)*
PHP29,355.00
(exc. VAT)
PHP32,877.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 15,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | PHP9.785 | PHP29,355.00 |
| 6000 - 9000 | PHP9.491 | PHP28,473.00 |
| 12000 - 27000 | PHP9.207 | PHP27,621.00 |
| 30000 + | PHP8.931 | PHP26,793.00 |
*price indicative
- RS Stock No.:
- 919-4725
- Mfr. Part No.:
- IRF5801TRPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 600mA | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | HEXFET | |
| Package Type | TSOP | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 2.2Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 3.9nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 0.9mm | |
| Length | 3mm | |
| Width | 1.5 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 600mA | ||
Maximum Drain Source Voltage Vds 200V | ||
Series HEXFET | ||
Package Type TSOP | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 2.2Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 3.9nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 0.9mm | ||
Length 3mm | ||
Width 1.5 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
N-Channel Power MOSFET 150V to 600V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 6-Pin TSOP IRF5801TRPBF
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 6-Pin TSOP
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 6-Pin TSOP IRFTS8342TRPBF
- Infineon HEXFET Type P-Channel MOSFET 30 V Enhancement, 6-Pin TSOP
- Infineon HEXFET Type P-Channel MOSFET 20 V Enhancement, 6-Pin TSOP
- Infineon HEXFET Type P-Channel MOSFET 30 V Enhancement, 6-Pin TSOP IRFTS9342TRPBF
- Infineon HEXFET Type P-Channel MOSFET 20 V Enhancement, 6-Pin TSOP IRLTS2242TRPBF
- Vishay IRFD Type N-Channel MOSFET 200 V Enhancement, 4-Pin HVMDIP