Infineon HEXFET Type N-Channel MOSFET, 600 mA, 200 V Enhancement, 6-Pin TSOP IRF5801TRPBF
- RS Stock No.:
- 301-631
- Distrelec Article No.:
- 304-36-986
- Mfr. Part No.:
- IRF5801TRPBF
- Manufacturer:
- Infineon
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View bulk pricing optionsSubtotal (1 pack of 10 units)*
PHP250.30
(exc. VAT)
PHP280.30
(inc. VAT)
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- Plus 13,660 unit(s) shipping from August 31, 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 10 | PHP25.03 | PHP250.30 |
| 20 - 40 | PHP24.188 | PHP241.88 |
| 50 - 90 | PHP23.587 | PHP235.87 |
| 100 - 190 | PHP22.986 | PHP229.86 |
| 200 + | PHP22.386 | PHP223.86 |
*price indicative
- RS Stock No.:
- 301-631
- Distrelec Article No.:
- 304-36-986
- Mfr. Part No.:
- IRF5801TRPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 600mA | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | HEXFET | |
| Package Type | TSOP | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 2.2Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 2W | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 3.9nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 3mm | |
| Standards/Approvals | No | |
| Width | 1.5mm | |
| Height | 0.9mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 600mA | ||
Maximum Drain Source Voltage Vds 200V | ||
Series HEXFET | ||
Package Type TSOP | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 2.2Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 2W | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 3.9nC | ||
Maximum Operating Temperature 150°C | ||
Length 3mm | ||
Standards/Approvals No | ||
Width 1.5mm | ||
Height 0.9mm | ||
Automotive Standard No | ||
N-Channel Power MOSFET 150V to 600V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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