Infineon HEXFET Type P-Channel MOSFET, 5.8 A, 30 V Enhancement, 6-Pin TSOP IRFTS9342TRPBF

RS Stock No.:: 907-5151
Mfr. Part No.:: IRFTS9342TRPBF
Manufacturer:: Infineon

Infineon HEXFET Type P-Channel MOSFET, 5.8 A, 30 V Enhancement, 6-Pin TSOP IRFTS9342TRPBF

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Subtotal (1 pack of 50 units)*

PHP1,063.30

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PHP1,190.90

(inc. VAT)

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Units	Per Unit	Per Pack*
50 - 450	PHP21.266	PHP1,063.30
500 - 2450	PHP19.935	PHP996.75
2500 - 4950	PHP18.401	PHP920.05
5000 - 12450	PHP17.751	PHP887.55
12500 +	PHP17.485	PHP874.25

*price indicative

RS Stock No.:: 907-5151
Mfr. Part No.:: IRFTS9342TRPBF
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	5.8A
	Maximum Drain Source Voltage Vds	30V
	Series	HEXFET
	Package Type	TSOP
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	66mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	2W
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	12nC
	Forward Voltage Vf	-1.2V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Length	3mm
	Width	1.75 mm
	Standards/Approvals	No
	Height	1.3mm
	Distrelec Product Id	304-44-469
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 5.8A
	Maximum Drain Source Voltage Vds 30V
	Series HEXFET
	Package Type TSOP
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 66mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 2W
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 12nC
	Forward Voltage Vf -1.2V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Length 3mm
	Width 1.75 mm
	Standards/Approvals No
	Height 1.3mm
	Distrelec Product Id 304-44-469
	Automotive Standard No

Infineon HEXFET Series MOSFET, 5.8A Maximum Continuous Drain Current, 2W Maximum Power Dissipation - IRFTS9342TRPBF

This MOSFET is designed for high efficiency across various applications, playing a critical role in electronic circuits that require enhanced performance and dependability. Its low on-resistance and significant current-handling capabilities contribute to energy efficiency and system stability in automation and electrical applications.

Features & Benefits

• Low Rds(on) improves energy efficiency

• Continuous drain current support of 5.8 A for effective performance

• Maximum drain-source voltage of 30 V ensures durability

• Surface mount design allows for compact, efficient layouts

• Operating temperature range of -55°C to +150°C enhances adaptability

Applications

• Used in battery-operated DC motor inverters

• Employed for system or load switching in varied circuits

• Applicable for drive operations within automation systems

• Utilised in power management systems for improved efficiency

How does this component perform under extreme temperatures?

It operates effectively within a wide temperature range from -55°C to +150°C, ensuring dependability in various environments.

What is the benefit of the low on-resistance feature?

A low Rds(on) Value decreases power loss in applications, leading to enhanced overall efficiency and thermal performance.

Can this device handle pulsed currents?

Yes, it can manage pulsed drain currents effectively, making it suitable for dynamic applications in electronics.

How is it mounted in circuits?

The device is designed for surface mount applications, facilitating Compact assembly and efficient space utilisation on PCBs.

What considerations should be taken when handling this component?

Users should ensure proper handling due to its sensitivity to voltage levels, adhering to specified maximum gate-source voltage limits.