Infineon HEXFET Type P-Channel MOSFET, 7.2 A, 20 V Enhancement, 6-Pin PQFN IRLHS2242TRPBF
- RS Stock No.:
- 130-1018
- Distrelec Article No.:
- 304-36-993
- Mfr. Part No.:
- IRLHS2242TRPBF
- Manufacturer:
- Infineon
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PHP535.325
(exc. VAT)
PHP599.575
(inc. VAT)
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Last RS stock
- Final 2,075 unit(s), ready to ship from another location
Units | Per Unit | Per Pack* |
|---|---|---|
| 25 - 100 | PHP21.413 | PHP535.33 |
| 125 - 475 | PHP20.77 | PHP519.25 |
| 500 - 975 | PHP20.147 | PHP503.68 |
| 1000 - 2475 | PHP19.543 | PHP488.58 |
| 2500 + | PHP18.956 | PHP473.90 |
*price indicative
- RS Stock No.:
- 130-1018
- Distrelec Article No.:
- 304-36-993
- Mfr. Part No.:
- IRLHS2242TRPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7.2A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | HEXFET | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 53mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 9.6W | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 2.1mm | |
| Height | 0.95mm | |
| Width | 2.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7.2A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series HEXFET | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 53mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 9.6W | ||
Maximum Gate Source Voltage Vgs 12V | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 2.1mm | ||
Height 0.95mm | ||
Width 2.1mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 7.2A Maximum Continuous Drain Current, 9.6W Maximum Power Dissipation - IRLHS2242TRPBF
This surface mount MOSFET is suitable for applications that demand high-efficiency switching. Its low on-resistance, paired with HEXFET technology, contributes to minimal power loss, making it appropriate for power management tasks within various electronic circuits. With a maximum temperature rating ranging from -55°C to +150°C, it operates effectively in challenging conditions.
Features & Benefits
• Low Rds(on) ensures high efficiency and reduced heat generation
• Capable of handling continuous drain current of 7.2A for robust performance
• Compact 6-pin DFN package facilitates easy integration into limited spaces
• Enhancement mode operation allows for versatile design options
• Provides excellent thermal resistance for improved longevity
Applications
• Used for system/load switching in automation systems
• Ideal for charge and discharge switching in battery management
• Suitable for Compact electronic devices requiring high efficiency
• Employed in electrical control systems and power management circuits
What is the significance of the low Rds(on) feature?
The low Rds(on) feature leads to reduced conduction losses, enhancing overall efficiency and maintaining lower temperatures during operation, which is VITAL for high power applications.
How does this component manage thermal performance?
It has a maximum temperature rating of +150°C, along with low thermal resistance to improve heat dissipation, ensuring stable operation under high-load conditions.
Can it handle varying operational environments?
Yes, it functions effectively across a temperature range of -55°C to +150°C, making it suitable for rigorous applications in diverse climates.
Is it suitable for high-frequency applications?
The MOSFET's design supports high-speed switching, making it effective for high-frequency applications in contemporary electronics.
What are the mounting requirements for optimal performance?
For best outcomes, it should be mounted on a PCB with adequate thermal management features to optimise heat dissipation and electrical connections.
Related links
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- Infineon HEXFET Type P-Channel MOSFET 20 V Enhancement, 6-Pin TSOP IRLTS2242TRPBF
- Infineon HEXFET Type P-Channel MOSFET 30 V Enhancement, 7-Pin PQFN
- Infineon HEXFET Type P-Channel MOSFET 30 V Enhancement, 8-Pin PQFN
- Infineon HEXFET Type P-Channel MOSFET 30 V Enhancement, 8-Pin PQFN IRFHM9331TRPBF
- Infineon HEXFET Type P-Channel MOSFET 30 V Enhancement, 6-Pin TSOP