Infineon HEXFET Type P-Channel MOSFET, 6 A, 30 V Enhancement, 7-Pin PQFN IRFHS9301TRPBF
- RS Stock No.:
- 737-7310
- Mfr. Part No.:
- IRFHS9301TRPBF
- Manufacturer:
- Infineon
This image is representative of the product range
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Subtotal (1 pack of 10 units)*
PHP145.02
(exc. VAT)
PHP162.42
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Last RS stock
- Final 38,190 unit(s), ready to ship from another location
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 10 | PHP14.502 | PHP145.02 |
| 20 - 40 | PHP14.067 | PHP140.67 |
| 50 - 90 | PHP13.646 | PHP136.46 |
| 100 - 190 | PHP13.236 | PHP132.36 |
| 200 + | PHP12.838 | PHP128.38 |
*price indicative
- RS Stock No.:
- 737-7310
- Mfr. Part No.:
- IRFHS9301TRPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PQFN | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2.1W | |
| Forward Voltage Vf | -1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.1mm | |
| Height | 0.95mm | |
| Width | 2.1 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PQFN | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2.1W | ||
Forward Voltage Vf -1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 2.1mm | ||
Height 0.95mm | ||
Width 2.1 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
P-Channel Power MOSFET 30V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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