Infineon HEXFET Type N-Channel MOSFET, 33 A, 150 V Enhancement, 3-Pin TO-263 IRFS4615TRLPBF
- RS Stock No.:
- 827-4114
- Mfr. Part No.:
- IRFS4615TRLPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
PHP683.15
(exc. VAT)
PHP765.15
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- Plus 200 unit(s) shipping from August 10, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 20 | PHP136.63 | PHP683.15 |
| 25 - 95 | PHP132.534 | PHP662.67 |
| 100 - 245 | PHP128.558 | PHP642.79 |
| 250 - 495 | PHP124.70 | PHP623.50 |
| 500 + | PHP120.96 | PHP604.80 |
*price indicative
- RS Stock No.:
- 827-4114
- Mfr. Part No.:
- IRFS4615TRLPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 33A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 42mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 144W | |
| Typical Gate Charge Qg @ Vgs | 26nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 4.83mm | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 33A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 42mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 144W | ||
Typical Gate Charge Qg @ Vgs 26nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 4.83mm | ||
Length 10.67mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Infineon HEXFET Series MOSFET, 150V Maximum Drain Source Voltage, 33A Maximum Continuous Drain Current - IRFS4615TRLPBF
This MOSFET is a high-voltage N-channel enhancement-mode transistor designed for power switching in surface-mounted assemblies. It operates across a wide temperature range and is suitable for demanding thermal environments while providing controlled gate-driven switching for medium- to high-current applications.
Features and Benefits:
• 150V drain-source withstand enables high-voltage switching capability
• 33A continuous drain current supports substantial load currents
• 42 mΩ RDS(on) minimises conduction losses under heavy load
• 26 nC typical gate charge allows predictable drive requirements
• 144W maximum power dissipation handles elevated power levels
• 20V gate-source limit protects against excessive gate stress
• 33A continuous drain current supports substantial load currents
• 42 mΩ RDS(on) minimises conduction losses under heavy load
• 26 nC typical gate charge allows predictable drive requirements
• 144W maximum power dissipation handles elevated power levels
• 20V gate-source limit protects against excessive gate stress
Applications
• Suitable for DC-DC converters in industrial power supplies
• Ideal for motor-drive stages requiring high current
• Used with battery-management systems needing high-voltage switching
• Can be used for synchronous rectification in power conversion
• Suitable for high-temperature power modules in harsh environments
• Ideal for motor-drive stages requiring high current
• Used with battery-management systems needing high-voltage switching
• Can be used for synchronous rectification in power conversion
• Suitable for high-temperature power modules in harsh environments
What thermal limits govern long-term operation?
The device is specified to function from -55 °C up to 175 °C, enabling use in high-temperature systems where elevated junction temperatures are expected.
What package and mounting style does it require?
It is supplied in a TO-263 package intended for surface-mount assembly on appropriate copper-area land patterns for heat dissipation.
How does the gate charge affect driver selection?
With a typical total gate charge of 26 nC, designers should select drivers capable of delivering the required charge within the target switching timeframe to limit transition losses.
What voltage constraints apply to the gate and drain?
The maximum permissible gate-to-source voltage is 20V while the drain-to-source voltage rating is 150V, defining safe operating boundaries for gate drive and load transients.
Related links
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin IPAK IRFU4615PBF
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin IPAK
- Infineon HEXFET Type N-Channel MOSFET 150 V TO-252
- Infineon HEXFET Type N-Channel MOSFET 150 V TO-252 IRFR4615TRLPBF
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263 IRF540NSTRLPBF
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263 IRF540NSTRRPBF