Infineon HEXFET Type N-Channel MOSFET, 33 A, 150 V TO-252 IRFR4615TRLPBF
- RS Stock No.:
- 257-5867
- Mfr. Part No.:
- IRFR4615TRLPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP348.88
(exc. VAT)
PHP390.745
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 1,970 unit(s) ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 45 | PHP69.776 | PHP348.88 |
| 50 - 95 | PHP67.684 | PHP338.42 |
| 100 - 245 | PHP63.624 | PHP318.12 |
| 250 - 995 | PHP57.896 | PHP289.48 |
| 1000 + | PHP50.948 | PHP254.74 |
*price indicative
- RS Stock No.:
- 257-5867
- Mfr. Part No.:
- IRFR4615TRLPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 33A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | PCB | |
| Maximum Drain Source Resistance Rds | 34mΩ | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 26nC | |
| Maximum Power Dissipation Pd | 144W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 33A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type PCB | ||
Maximum Drain Source Resistance Rds 34mΩ | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 26nC | ||
Maximum Power Dissipation Pd 144W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100kHz
Industry standard surface mount package
Related links
- Infineon HEXFET Type N-Channel MOSFET 150 V TO-252
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin IPAK IRFU4615PBF
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-263 IRFS4615TRLPBF
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin IPAK
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-262
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-247