Infineon HEXFET Type N-Channel MOSFET, 33 A, 100 V Enhancement, 3-Pin TO-263 IRF540NSTRLPBF

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Subtotal (1 pack of 10 units)*

PHP717.36

(exc. VAT)

PHP803.44

(inc. VAT)

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  • 120 unit(s) ready to ship from another location
  • Plus 32,580 unit(s) shipping from March 18, 2026
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Units
Per Unit
Per Pack*
10 - 10PHP71.736PHP717.36
20 - 40PHP69.586PHP695.86
50 - 90PHP67.498PHP674.98
100 - 190PHP65.474PHP654.74
200 +PHP63.509PHP635.09

*price indicative

Packaging Options:
RS Stock No.:
831-2831
Distrelec Article No.:
304-44-447
Mfr. Part No.:
IRF540NSTRLPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

33A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

44mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

71nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

130W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Length

10.67mm

Height

4.83mm

Width

9.65 mm

Standards/Approvals

No

Automotive Standard

No

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