Infineon HEXFET Type N-Channel MOSFET, 33 A, 100 V Enhancement, 3-Pin TO-263 IRF540NSTRRPBF

RS Stock No.:: 831-2840
Mfr. Part No.:: IRF540NSTRRPBF
Manufacturer:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 33 A, 100 V Enhancement, 3-Pin TO-263 IRF540NSTRRPBF

This image is representative of the product range

Bulk discount available

Subtotal (1 pack of 10 units)*

PHP668.14

(exc. VAT)

PHP748.32

(inc. VAT)

FREE delivery for orders over ₱3,000.00

In Stock

120 unit(s) ready to ship from another location
Plus 50 unit(s) shipping from January 01, 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per Unit	Per Pack*
10 - 10	PHP66.814	PHP668.14
20 - 40	PHP64.809	PHP648.09
50 - 90	PHP62.864	PHP628.64
100 - 190	PHP60.978	PHP609.78
200 +	PHP59.149	PHP591.49

*price indicative

RS Stock No.:: 831-2840
Mfr. Part No.:: IRF540NSTRRPBF
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	33A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TO-263
	Series	HEXFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	44mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	71nC
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	130W
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Length	10.67mm
	Height	4.83mm
	Width	9.65 mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 33A
	Maximum Drain Source Voltage Vds 100V
	Package Type TO-263
	Series HEXFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 44mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 71nC
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 130W
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Length 10.67mm
	Height 4.83mm
	Width 9.65 mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 33A Maximum Continuous Drain Current, 130W Maximum Power Dissipation - IRF540NSTRRPBF

This N-channel power MOSFET is specifically designed for high-efficiency applications, delivering significant performance in various electronic systems. It excels in high-current environments, where reliability and low resistance are essential. Its enhancements make it particularly useful in industries focused on automation and power management.

Features & Benefits

• Low RDS(on) minimises power losses during operation

• Continuous drain current capability of 33A supports various applications

• Wide gate-source voltage range provides design flexibility

• Withstands high temperatures up to 175°C

• Fast switching improves overall circuit efficiency

• D2PAK surface mount design facilitates PCB integration

Applications

• Used in power management circuits for automation

• Commonly implemented in DC-DC converters for energy efficiency

• Suitable for motor drive that require high current

• Found in power supply modules for industrial electronics

• Appropriate for automotive due to robust thermal performance

What is the significance of low RDS(on) in operation?

Low RDS(on) reduces heat generation and enhances energy efficiency, which is Crucial for extending component life and lowering operating expenses.

How does the MOSFET perform at higher temperatures?

It operates reliably up to 175°C, ensuring stability in extreme conditions while meeting performance demands without failure.

Can this device handle pulsed currents, and what are the specifications?

It supports pulsed drain currents up to 110A, effectively managing short bursts of high power, making it Ideal for applications with fluctuating load conditions.

What are the implications of the specified gate threshold voltage?

The gate threshold voltage range of 2V to 4V indicates the voltage needed to start conduction, providing essential information for design integration in control circuits.

How does the D2PAK package affect its usability?

The D2PAK package design promotes efficient heat dissipation and simplifies surface mount assembly, making it suitable for high-power applications on Compact PCBs.