Infineon HEXFET Type N-Channel MOSFET, 12 A, 60 V Enhancement, 8-Pin SOIC IRF7855TRPBF
- RS Stock No.:
- 827-3893
- Mfr. Part No.:
- IRF7855TRPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
PHP957.10
(exc. VAT)
PHP1,072.00
(inc. VAT)
FREE delivery for orders over ₱5,000.00
In Stock
- Plus 7,230 unit(s) shipping from August 31, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 10 | PHP95.71 | PHP957.10 |
| 20 - 90 | PHP92.093 | PHP920.93 |
| 100 - 190 | PHP88.77 | PHP887.70 |
| 200 - 390 | PHP85.83 | PHP858.30 |
| 400 + | PHP83.113 | PHP831.13 |
*price indicative
- RS Stock No.:
- 827-3893
- Mfr. Part No.:
- IRF7855TRPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOIC | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 9.4mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 26nC | |
| Maximum Power Dissipation Pd | 2.5W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.5mm | |
| Standards/Approvals | No | |
| Width | 4mm | |
| Length | 5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOIC | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 9.4mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 26nC | ||
Maximum Power Dissipation Pd 2.5W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 150°C | ||
Height 1.5mm | ||
Standards/Approvals No | ||
Width 4mm | ||
Length 5mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 60V Maximum Drain Source Voltage, 12A Maximum Continuous Drain Current - IRF7855TRPBF
This MOSFET is a high-current N-channel transistor designed for switching and power-management tasks in surface-mounted assemblies. It operates across a wide temperature range for industrial use and is suited to applications requiring low conduction losses and fast gate response. The device is supplied in an 8-pin SOIC package for compact PCB mounting and supports moderate power dissipation in continuous operation.
Features and Benefits:
• 60V drain rating enables switching in medium-voltage systems
• 12A continuous drain current supports elevated load currents
• 9.4mΩ low Rds(on) reduces conduction losses under load
• 26nC typical gate charge ensures responsive switching control
• 20V gate tolerance allows flexible drive voltages
• 2.5W power dissipation manages thermal load in confined spaces
• 12A continuous drain current supports elevated load currents
• 9.4mΩ low Rds(on) reduces conduction losses under load
• 26nC typical gate charge ensures responsive switching control
• 20V gate tolerance allows flexible drive voltages
• 2.5W power dissipation manages thermal load in confined spaces
Applications
• Suitable for power rails in industrial control equipment
• Used with motor drivers requiring high-current switching
• Ideal for DC-DC converters in compact power supplies
• Can be used for load switching in telecoms equipment
• Suitable for surface-mount designs requiring SOIC packages
• Used with motor drivers requiring high-current switching
• Ideal for DC-DC converters in compact power supplies
• Can be used for load switching in telecoms equipment
• Suitable for surface-mount designs requiring SOIC packages
What temperature range can it reliably withstand in operation?
It operates from -55°C up to 150°C, accommodating harsh industrial thermal environments.
How does the package type affect PCB layout considerations?
The 8-pin SOIC footprint requires attention to thermal vias and copper area to dissipate its 2.5W maximum power loss effectively.
What electrical characteristic determines conduction efficiency at high currents?
The device’s maximum drain-source resistance of 9.4mΩ primarily governs conduction losses during sustained current flow.
How should gate drive be dimensioned for efficient switching?
Design gate drivers to supply sufficient charge for the typical 26nC Qg to balance switching speed against drive energy and EMI.
Related links
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 8-Pin SOIC
- Infineon HEXFET Type N-Channel MOSFET 80 V Enhancement, 8-Pin SOIC
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 8-Pin SOIC
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin SOIC
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC IRF7821TRPBF
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC IRF7832TRPBF