Infineon OptiMOS P Type P-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin TSDSON BSZ086P03NS3EGATMA1

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PHP858.80

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PHP961.80

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20 - 480PHP42.94PHP858.80
500 - 980PHP41.652PHP833.04
1000 - 2480PHP39.153PHP783.06
2500 - 4980PHP35.629PHP712.58
5000 +PHP31.354PHP627.08

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Packaging Options:
RS Stock No.:
825-9134
Mfr. Part No.:
BSZ086P03NS3EGATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

30V

Package Type

TSDSON

Series

OptiMOS P

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

13.4mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

43.2nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-1.1V

Maximum Power Dissipation Pd

69W

Maximum Gate Source Voltage Vgs

25 V

Maximum Operating Temperature

150°C

Height

1.1mm

Width

3.4 mm

Length

3.4mm

Standards/Approvals

No

Automotive Standard

No

RoHS Status: Not Applicable

Infineon OptiMOS™P P-Channel Power MOSFETs


The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

Enhancement mode

Avalanche rated

Low switching and conduction power losses

Pb-free lead plating; RoHS compliant

Standard packages

OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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