P-Channel MOSFET, 40 A, 30 V, 8-Pin TSDSON Infineon BSZ086P03NS3EGATMA1

RS Stock No.:: 825-9134
Mfr. Part No.:: BSZ086P03NS3EGATMA1
Manufacturer:: Infineon

P-Channel MOSFET, 40 A, 30 V, 8-Pin TSDSON Infineon BSZ086P03NS3EGATMA1

This image is representative of the product range

Bulk discount available

Price Each (In a Pack of 20)

PHP44.08

(exc. VAT)

PHP49.37

(inc. VAT)

14100 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per Unit	Per Pack**
20 - 480	PHP44.08	PHP881.60
500 - 980	PHP42.758	PHP855.16
1000 - 2480	PHP40.193	PHP803.86
2500 - 4980	PHP36.576	PHP731.52
5000 +	PHP32.187	PHP643.74

**price indicative

RS Stock No.:: 825-9134
Mfr. Part No.:: BSZ086P03NS3EGATMA1
Manufacturer:: Infineon

BSZ086P03NS3E G, OptiMOS P3 Power-Transistor
ESD Control Selection Guide V1

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	40 A
Maximum Drain Source Voltage	30 V
Series	OptiMOS P
Package Type	TSDSON
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	13.4 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1.9V
Minimum Gate Threshold Voltage	3.1V
Maximum Power Dissipation	69 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-25 V, +25 V
Number of Elements per Chip	1
Transistor Material	Si
Width	3.4mm
Typical Gate Charge @ Vgs	43.2 nC @ 10 V
Length	3.4mm
Maximum Operating Temperature	+150 °C
Minimum Operating Temperature	-55 °C
Height	1.1mm

P-Channel MOSFET, 40 A, 30 V, 8-Pin TSDSON Infineon BSZ086P03NS3EGATMA1

Infineon OptiMOS™P P-Channel Power MOSFETs

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