Infineon OptiMOS P Type P-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin TSDSON BSZ086P03NS3EGATMA1
- RS Stock No.:
- 825-9134
- Mfr. Part No.:
- BSZ086P03NS3EGATMA1
- Manufacturer:
- Infineon
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Units | Per Unit | Per Pack* |
|---|---|---|
| 20 - 480 | PHP42.94 | PHP858.80 |
| 500 - 980 | PHP41.653 | PHP833.06 |
| 1000 - 2480 | PHP39.154 | PHP783.08 |
| 2500 - 4980 | PHP35.63 | PHP712.60 |
| 5000 + | PHP31.355 | PHP627.10 |
*price indicative
- RS Stock No.:
- 825-9134
- Mfr. Part No.:
- BSZ086P03NS3EGATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TSDSON | |
| Series | OptiMOS P | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 13.4mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 69W | |
| Typical Gate Charge Qg @ Vgs | 43.2nC | |
| Forward Voltage Vf | -1.1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Length | 3.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TSDSON | ||
Series OptiMOS P | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 13.4mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 69W | ||
Typical Gate Charge Qg @ Vgs 43.2nC | ||
Forward Voltage Vf -1.1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Length 3.4mm | ||
Automotive Standard No | ||
RoHS Status: Not Applicable
Infineon OptiMOS P Series MOSFET, 30V Maximum Drain Source Voltage, 40A Maximum Continuous Drain Current - BSZ086P03NS3EGATMA1
This MOSFET is a P‑channel enhancement device designed for high‑current switching in compact surface‑mount assemblies. It operates across a wide temperature range suitable for demanding electronic environments and is built to handle significant drain currents and power dissipation. The package is a low‑profile 8‑pin TSDSON for efficient PCB mounting and thermal performance.
Features and Benefits:
• Low on‑resistance reduces conduction losses during high currents
• 40A continuous drain current supports heavy load switching
• 69W maximum power dissipation enables higher power handling
• 43.2nC typical gate charge balances switching speed and drive effort
• 25V gate tolerance allows robust gate‑drive margins
• 30V drain‑source rating suits moderate voltage system designs
• 40A continuous drain current supports heavy load switching
• 69W maximum power dissipation enables higher power handling
• 43.2nC typical gate charge balances switching speed and drive effort
• 25V gate tolerance allows robust gate‑drive margins
• 30V drain‑source rating suits moderate voltage system designs
Applications
• Suitable for point‑of‑load power conversion modules
• Ideal for synchronous buck converter switches
• Used with battery management circuits in power systems
• Can be used for motor‑driver low‑side/power‑path control
• Appropriate for telecoms and server power rails
• Ideal for synchronous buck converter switches
• Used with battery management circuits in power systems
• Can be used for motor‑driver low‑side/power‑path control
• Appropriate for telecoms and server power rails
What thermal extremes can it withstand during operation?
It is specified to operate from -55°C up to 150°C, accommodating wide ambient and junction variations.
How many pins and which mounting method does it use?
The device uses an 8‑pin footprint and is intended for surface mounting in a TSDSON package.
What electrical characteristic limits conduction losses?
The device’s maximum drain‑source resistance is 13.4mΩ, which governs on‑state voltage drop and efficiency.
What gate‑driving considerations are relevant for switching design?
With a typical gate charge of 43.2nC and a maximum gate‑source rating of 25V, drive circuitry must supply sufficient charge while staying within voltage limits.
Related links
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