Infineon OptiMOS P3 Type P-Channel MOSFET, 39.6 A, 30 V Enhancement, 8-Pin TSDSON BSZ180P03NS3GATMA1
- RS Stock No.:
- 214-8990
- Mfr. Part No.:
- BSZ180P03NS3GATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 50 units)*
PHP1,089.00
(exc. VAT)
PHP1,219.50
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 5,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 50 - 50 | PHP21.78 | PHP1,089.00 |
| 100 - 100 | PHP19.968 | PHP998.40 |
| 150 - 200 | PHP18.43 | PHP921.50 |
| 250 - 450 | PHP17.113 | PHP855.65 |
| 500 + | PHP16.637 | PHP831.85 |
*price indicative
- RS Stock No.:
- 214-8990
- Mfr. Part No.:
- BSZ180P03NS3GATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 39.6A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | OptiMOS P3 | |
| Package Type | TSDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 18mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.1V | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Maximum Power Dissipation Pd | 40W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 5.49mm | |
| Height | 1.1mm | |
| Width | 6.35 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 39.6A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series OptiMOS P3 | ||
Package Type TSDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 18mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.1V | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Maximum Power Dissipation Pd 40W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 5.49mm | ||
Height 1.1mm | ||
Width 6.35 mm | ||
Automotive Standard No | ||
The Infineon range of OptiMOS single P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, battery management and load switching.
It has 150 °C operating temperature
Qualified according to JEDEC for target applications
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