Infineon OptiMOS P Type P-Channel MOSFET, 14.9 A, 20 V Enhancement, 8-Pin DSO BSO201SPHXUMA1

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10 - 10PHP74.872PHP748.72
20 - 90PHP67.385PHP673.85
100 - 190PHP60.647PHP606.47
200 - 390PHP54.582PHP545.82
400 +PHP49.124PHP491.24

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Packaging Options:
RS Stock No.:
827-5356
Mfr. Part No.:
BSO201SPHXUMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

14.9A

Maximum Drain Source Voltage Vds

20V

Series

OptiMOS P

Package Type

DSO

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

12.9mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

66nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

12 V

Maximum Power Dissipation Pd

2.5W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Height

1.65mm

Width

4 mm

Length

5mm

Standards/Approvals

No

Automotive Standard

No

Infineon OptiMOS™P P-Channel Power MOSFETs


The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

Enhancement mode

Avalanche rated

Low switching and conduction power losses

Pb-free lead plating; RoHS compliant

Standard packages

OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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