Infineon BSO080P03S H OptiMOSTM-P Type P-Channel MOSFET, -14.9 A, -30 V Enhancement, 8-Pin PG-DSO-8
- RS Stock No.:
- 273-5242
- Mfr. Part No.:
- BSO080P03SHXUMA1
- Manufacturer:
- Infineon
This image is representative of the product range
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Subtotal (1 pack of 5 units)*
PHP601.92
(exc. VAT)
PHP674.15
(inc. VAT)
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In Stock
- 90 unit(s) ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 45 | PHP120.384 | PHP601.92 |
| 50 - 95 | PHP100.184 | PHP500.92 |
| 100 - 245 | PHP92.538 | PHP462.69 |
| 250 - 995 | PHP85.988 | PHP429.94 |
| 1000 + | PHP84.352 | PHP421.76 |
*price indicative
- RS Stock No.:
- 273-5242
- Mfr. Part No.:
- BSO080P03SHXUMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -14.9A | |
| Maximum Drain Source Voltage Vds | -30V | |
| Package Type | PG-DSO-8 | |
| Series | BSO080P03S H OptiMOSTM-P | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -0.82V | |
| Typical Gate Charge Qg @ Vgs | -102nC | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 40mm | |
| Standards/Approvals | IEC61249-2-21, JEDEC, RoHS | |
| Height | 1.5mm | |
| Width | 40 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -14.9A | ||
Maximum Drain Source Voltage Vds -30V | ||
Package Type PG-DSO-8 | ||
Series BSO080P03S H OptiMOSTM-P | ||
Mount Type Surface | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -0.82V | ||
Typical Gate Charge Qg @ Vgs -102nC | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 40mm | ||
Standards/Approvals IEC61249-2-21, JEDEC, RoHS | ||
Height 1.5mm | ||
Width 40 mm | ||
Automotive Standard No | ||
The Infineon MOSFET is a P channel power MOSFET. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on state resistance and figure of merit characteristics. It has 150 degree Celsius operating temperature and qualified according JEDEC for target applications.
Logic level
Halogen free
RoHS compliant
Pb free lead plating
Enhancement mode
Related links
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