Infineon ISA Type N, Type P-Channel MOSFET, 7.9 A, 40 V Enhancement, 8-Pin PG-DSO-8 ISA250300C04LMDSXTMA1
- RS Stock No.:
- 348-907
- Mfr. Part No.:
- ISA250300C04LMDSXTMA1
- Manufacturer:
- Infineon
Bulk discount available
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PHP710.00
(exc. VAT)
PHP795.20
(inc. VAT)
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In Stock
- Plus 3,640 unit(s) shipping from August 31, 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 20 - 180 | PHP35.50 | PHP710.00 |
| 200 - 480 | PHP33.749 | PHP674.98 |
| 500 - 980 | PHP31.241 | PHP624.82 |
| 1000 - 1980 | PHP28.779 | PHP575.58 |
| 2000 + | PHP27.691 | PHP553.82 |
*price indicative
- RS Stock No.:
- 348-907
- Mfr. Part No.:
- ISA250300C04LMDSXTMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N, Type P | |
| Maximum Continuous Drain Current Id | 7.9A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PG-DSO-8 | |
| Series | ISA | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 35mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 8.1nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.2mm | |
| Height | 1.75mm | |
| Width | 5mm | |
| Standards/Approvals | IEC61249‐2‐21, JEDEC | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N, Type P | ||
Maximum Continuous Drain Current Id 7.9A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PG-DSO-8 | ||
Series ISA | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 35mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 8.1nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Operating Temperature 150°C | ||
Length 6.2mm | ||
Height 1.75mm | ||
Width 5mm | ||
Standards/Approvals IEC61249‐2‐21, JEDEC | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Infineon OptiMOS 3 Power Transistors available in complementary N and P channel configurations, are designed for high efficiency switching applications. These MOSFETs feature very low on resistance (RDS(on)), which minimizes conduction losses and enhances overall system performance. Additionally, they offer superior thermal resistance, ensuring better heat dissipation and reliability in demanding applications. These characteristics make them ideal for various power management and energy efficient designs.
100% avalanche tested
Pb free lead plating and RoHS compliant
Halogen free according to IEC61249‑2‑21
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